A Narrow-Linewidth On-Chip Toroid Raman Laser

2011 ◽  
Vol 47 (3) ◽  
pp. 320-326 ◽  
Author(s):  
Tao Lu ◽  
Lan Yang ◽  
Tal Carmon ◽  
Bumki Min
Keyword(s):  
2021 ◽  
Author(s):  
Lidan Jiang ◽  
Leilei Shi ◽  
Jing Luo ◽  
Qirui Gao ◽  
Tianyi Lan ◽  
...  

2019 ◽  
Vol 31 (14) ◽  
pp. 1143-1146
Author(s):  
Behsan Behzadi ◽  
Ravinder K. Jain ◽  
Mani Hossein-Zadeh

2017 ◽  
Vol 26 (03) ◽  
pp. 1750039 ◽  
Author(s):  
L. Sirleto ◽  
M. A. Ferrara ◽  
A. Vergara

One of the most important applications of stimulated Raman scattering (SRS) is the realization of amplifiers or laser sources in bulk materials, in fiber and in integrated optic format as well. We note that, as a general rule, in all laser gain bulk materials, there is a tradeoff between gain and bandwidth: line width may be increased at the expense of peak gain. This tradeoff is a fundamental limitation toward the realization of micro/nano-sources with large emission spectra. In this paper, in order to clarify the possibility of obtaining new materials with both large Raman gain coefficients and spectral bandwidth, SRS investigations in nanostructures, spanning from nanometrically heterogeneous K2O–Nb2O5SiO2 (KNS) glasses to Si nanocrystals, are reported and discussed.


2013 ◽  
Vol 38 (11) ◽  
pp. 1802 ◽  
Author(s):  
Bei-Bei Li ◽  
Yun-Feng Xiao ◽  
Meng-Yuan Yan ◽  
William R. Clements ◽  
Qihuang Gong
Keyword(s):  
High Q ◽  

2013 ◽  
Author(s):  
Bei-Bei Li ◽  
William R. Clements ◽  
Xiao-Chong Yu ◽  
Qihuang Gong ◽  
Yun-Feng Xiao
Keyword(s):  

2021 ◽  
Vol 9 ◽  
Author(s):  
Xuezong Yang ◽  
Zhenxu Bai ◽  
Huawei Jiang ◽  
Richard P. Mildren ◽  
Yan Feng

A 7.8-GHz linewidth ytterbium-doped fiber (YDF) laser with an output power of 75 W at 1,018 nm is demonstrated based on narrow-bandwidth fiber Bragg gratings. Effective suppression of spectral broadening and amplified spontaneous emission is achieved by optimizing the resonator structure and active fiber parameters. An 1,178-nm diamond Raman output pumped by this narrow-linewidth 1,018 nm source is addressed in this study, which shows a promising application of generating the sodium guide star laser at 589 nm. A single-longitudinal-mode Stokes with an output power of 0.6 W is obtained using this multimode 1,018 nm laser at the pump power of 13 W. The impact of pump spectral linewidth on the effective Raman gain coefficient is analyzed, and the laser threshold of the diamond Stokes resonator increases with the broadening of the pump linewidth.


2020 ◽  
Vol 18 (45) ◽  
pp. 9-20
Author(s):  
Zainab Salam Khaleefia ◽  
Sh. S. Mahdi ◽  
S. Kh. Yaseen

Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimensions width (W= 450 nm) and Length (L= 25 mm). The obtained Raman lasing is the lowest reported value at relatively high reflectivities. Raman laser in SOI nano-waveguides presents the important step towards integrated on-chip optoelectronic devices.


2021 ◽  
Author(s):  
Lidan Jiang ◽  
leilei shi ◽  
Jing Luo ◽  
Qirui Gao ◽  
Tianyi Lan ◽  
...  

2021 ◽  
Author(s):  
Renhong Gao ◽  
Jianglin Guan ◽  
Ni Yao ◽  
Li Deng ◽  
Jintian Lin ◽  
...  

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