Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model

2015 ◽  
Vol 51 (5) ◽  
pp. 1-8 ◽  
Author(s):  
Amira Ben Ahmed ◽  
Hosni Saidi ◽  
Said Ridene ◽  
Habib Bouchriha
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Transition ◽  
Laser Diodes ◽  
Optical Gain ◽  
Type Ii

Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model

2018 ◽  
Vol 35 (5) ◽  
pp. 057801
Author(s):  
Chang Wang ◽  
Wenwu Pan ◽  
Konstantin Kolokolov ◽  
Shumin Wang
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain ◽  
Type Ii ◽  
Type Ii Quantum Wells

Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 [micro sign]m at room temperature

1996 ◽  
Vol 32 (24) ◽  
pp. 2279 ◽  
Author(s):  
A.N. Baranov ◽  
Y. Cuminal ◽  
G. Boissier ◽  
C. Alibert ◽  
A. Joullié
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Laser Diodes ◽  
Type Ii ◽  
Low Threshold

Band structure and optical gain in GaInAsN quantum wells

2003 ◽  
Vol 17 ◽  
pp. 245-246 ◽  
Author(s):  
H. Carrère ◽  
A. Arnoult ◽  
X. Marie ◽  
T. Amand ◽  
E. Bedel-Pereira ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain
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