Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

2009 ◽  
Vol 15 (3) ◽  
pp. 838-843 ◽  
Author(s):  
Yutaka Onishi ◽  
Nobuhiro Saga ◽  
Kenji Koyama ◽  
Hideyuki Doi ◽  
Takashi Ishizuka ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 3997-4001 ◽  
Author(s):  
Shigeaki Sekiguchi ◽  
Tomoyuki Miyamoto ◽  
Tadayoshi Kimura ◽  
Gen Okazaki ◽  
Fumio Koyama ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Current Injection ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Device Resistance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarisation

2000 ◽  
Vol 36 (13) ◽  
pp. 1124 ◽  
Author(s):  
M. Ortsiefer ◽  
R. Shau ◽  
M. Zigldrum ◽  
G. Böhm ◽  
F. Köhler ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Long Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Linear Polarisation ◽  
Stable Linear

scholarly journals Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications

1998 ◽  
Vol 72 (2) ◽  
pp. 135-137 ◽  
Author(s):  
H. Gebretsadik ◽  
K. Kamath ◽  
W.-D. Zhou ◽  
P. Bhattacharya ◽  
C. Caneau ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Laser Applications ◽  
Long Wavelength ◽  
Lateral Oxidation ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

scholarly journals Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 187 ◽  
Author(s):  
Chih-Chiang Shen ◽  
Yun-Ting Lu ◽  
Yen-Wei Yeh ◽  
Cheng-Yuan Chen ◽  
Yu-Tzu Chen ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Indium Tin Oxide ◽  
Optical Loss ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Output Performance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

Hybrid magnetic tunnel junction/vertical cavity surface emitting laser field sensor device

2001 ◽  
Vol 37 (24) ◽  
pp. 1459 ◽  
Author(s):  
Yiping He ◽  
Qiang Zhang ◽  
A.V. Nurmikko ◽  
J. Slaughter ◽  
R.W. Dave ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Laser Field ◽  
Magnetic Tunnel Junction ◽  
Cavity Surface ◽  
Sensor Device ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Field Sensor ◽  
Vertical Cavity

Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers

2001 ◽  
Vol 40 (Part 1, No. 10) ◽  
pp. 5909-5913 ◽  
Author(s):  
Shigeaki Sekiguchi ◽  
Tadayoshi Kimura ◽  
Gen Okazaki ◽  
Tomoyuki Miyamoto ◽  
Fumio Koyama ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

1996 ◽  
Vol 421 ◽  
Author(s):  
D.I. Babic ◽  
V. Jayaraman ◽  
N. M. Margalit ◽  
K. Streubel ◽  
M.E. Heimbuch ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Active Regions ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Lattice Matched

AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

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