Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarisation

2000 ◽  
Vol 36 (13) ◽  
pp. 1124 ◽  
Author(s):  
M. Ortsiefer ◽  
R. Shau ◽  
M. Zigldrum ◽  
G. Böhm ◽  
F. Köhler ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Long Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Linear Polarisation ◽  
Stable Linear

scholarly journals Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications

1998 ◽  
Vol 72 (2) ◽  
pp. 135-137 ◽  
Author(s):  
H. Gebretsadik ◽  
K. Kamath ◽  
W.-D. Zhou ◽  
P. Bhattacharya ◽  
C. Caneau ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Laser Applications ◽  
Long Wavelength ◽  
Lateral Oxidation ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 3997-4001 ◽  
Author(s):  
Shigeaki Sekiguchi ◽  
Tomoyuki Miyamoto ◽  
Tadayoshi Kimura ◽  
Gen Okazaki ◽  
Fumio Koyama ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Current Injection ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Device Resistance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

2009 ◽  
Vol 15 (3) ◽  
pp. 838-843 ◽  
Author(s):  
Yutaka Onishi ◽  
Nobuhiro Saga ◽  
Kenji Koyama ◽  
Hideyuki Doi ◽  
Takashi Ishizuka ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

1996 ◽  
Vol 421 ◽  
Author(s):  
D.I. Babic ◽  
V. Jayaraman ◽  
N. M. Margalit ◽  
K. Streubel ◽  
M.E. Heimbuch ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Active Regions ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Lattice Matched

AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

1998 ◽  
Vol 10 (2) ◽  
pp. 188-190 ◽  
Author(s):  
M.C. Larson ◽  
M. Kondow ◽  
T. Kitatani ◽  
K. Nakahara ◽  
K. Tamura ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Optically-pumped long-wavelength vertical-cavity surface-emitting laser with high modulation bandwidth

2005 ◽  
Vol 86 (6) ◽  
pp. 061108
Author(s):  
M. V. Ramana Murty ◽  
D. Xu ◽  
C.-C. Lin ◽  
C.-L. Shieh ◽  
J. Y. Tsao ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Modulation Bandwidth ◽  
Optically Pumped ◽  
Long Wavelength ◽  
High Modulation ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

scholarly journals Long-wavelength GaInNAs/GaAs Vertical-cavity Surface-emitting Laser for Communication Applications

2020 ◽  
Vol 8 (1) ◽  
pp. 107-111
Author(s):  
Faten A. Chaqmaqchee
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Temperature Spectra ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
The Impact ◽  
Vertical Cavity

This paper presents a comprehensive study of optical and electrical properties of vertical-cavity surface-emitting lasers(VCSELS) for long wavelength communication applications. The device consists of GaInNAs/GaAs multi-quantum wells QWs that enclosed between standard top and bottom epitaxially grown on AlGaAs/GaAs distributed Bragg reflectors. The impact of driven currents and injecting optical powers through QWs layers on the output light emission is addressed. Room temperature spectra measurements are performed at various applied currents using 980 nm pump laser and maximum intensity amplitude at around 21 dB was achieved.

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