Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode

IEEE Electron Device Letters ◽

10.1109/led.2004.826569 ◽

2004 ◽

Vol 25 (5) ◽

pp. 268-270 ◽

Author(s):

S. Zhu ◽

H.Y. Yu ◽

S.J. Whang ◽

J.H. Chen ◽

C. Shen ◽

...

Keyword(s):

Schottky Barrier ◽

Gate Dielectrics ◽

Gate Electrode ◽

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Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectrics and metal gate electrode

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272085 ◽

2004 ◽

Author(s):

Shiyang Zhu ◽

H.Y. Yu ◽

S.J. Whang ◽

J.H. Chen ◽

Chen Shen ◽

...

Keyword(s):

Low Temperature ◽

Schottky Barrier ◽

Gate Dielectrics ◽

Gate Electrode ◽

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Advanced Metal Gate Electrode Options Compatible with ALD and AVD HfSiOx-Based Gate Dielectrics

ECS Meeting Abstracts ◽

10.1149/ma2006-02/22/1125 ◽

2006 ◽

Keyword(s):

Gate Dielectrics ◽

Gate Electrode ◽

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Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics

ECS Transactions ◽

10.1149/1.2355727 ◽

2019 ◽

Vol 3 (3) ◽

pp. 363-374 ◽

Author(s):

Zia Karim ◽

Olivier Biossiere ◽

Christoph Lohe ◽

Zhihong Zhang ◽

Woong Park ◽

...

Keyword(s):

Gate Dielectrics ◽

Gate Electrode ◽

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Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

10.7567/ssdm.2009.b-4-4 ◽

2009 ◽

Author(s):

S. Inumiya ◽

A. Kaneko ◽

K. Nagatomo ◽

M. Goto ◽

K. Tatsumura ◽

...

Keyword(s):

Gate Dielectrics ◽

High Mobility ◽

Gate Electrode ◽

Reliability Improvement

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BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application

IEEE 2011 International SOI Conference ◽

10.1109/soi.2011.6081720 ◽

2011 ◽

Author(s):

M. Galeti ◽

M. Rodrigues ◽

J. A. Martino ◽

N. Collaert ◽

E. Simoen ◽

...

Keyword(s):

Gate Dielectrics ◽

Gate Electrode ◽

Effect Analysis ◽

High K ◽

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Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

Solid-State Electronics ◽

10.1016/j.sse.2004.05.045 ◽

2004 ◽

Vol 48 (10-11) ◽

pp. 1987-1992 ◽

Author(s):

Shiyang Zhu ◽

H.Y. Yu ◽

J.D. Chen ◽

S.J. Whang ◽

J.H. Chen ◽

...

Keyword(s):

Low Temperature ◽

Schottky Barrier ◽

Gate Dielectric ◽

Gate Electrode ◽

High K ◽

High K Gate Dielectric

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Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173278 ◽

2009 ◽

Author(s):

Izumi Hirano ◽

Yasushi Nakasaki ◽

Shigeto Fukatsu ◽

Akiko Masada ◽

Yuichiro Mitani ◽

...

Keyword(s):

Weibull Distribution ◽

Gate Dielectrics ◽

Gate Electrode ◽

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Characteristics of Pt and TaN Metal Gate Electrode for High-κ Hafnium Oxide Gate Dielectrics

Electrochemical and Solid-State Letters ◽

10.1149/1.1645754 ◽

2004 ◽

Vol 7 (3) ◽

pp. G47 ◽

Author(s):

Kyu-Jeong Choi ◽

Soon-Gil Yoon

Keyword(s):

Hafnium Oxide ◽

Gate Dielectrics ◽

Gate Electrode ◽

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Plasmon-Phonon Resonance at Gate-Electrode/Gate-Dielectric Interface on Carrier Mobility of Organic TFTs with High-k Gate Dielectrics

Applied Surface Science ◽

10.1016/j.apsusc.2021.150374 ◽

2021 ◽

pp. 150374

Author(s):

Y.X. Ma ◽

H. Su ◽

W.M. Tang ◽

P.T. Lai

Keyword(s):

Carrier Mobility ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Gate Electrode ◽

Dielectric Interface ◽

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Schottky barrier and interface formation of metal–GaTe(001) interfaces

Journal of Applied Physics ◽

10.1063/1.368332 ◽

1998 ◽

Vol 84 (4) ◽

pp. 1990-1993 ◽

Author(s):

J. Almeida ◽

H. Berger ◽

G. Margaritondo

Keyword(s):

Schottky Barrier ◽

Interface Formation ◽

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