Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectrics and metal gate electrode

2004 ◽  
Author(s):  
Shiyang Zhu ◽  
H.Y. Yu ◽  
S.J. Whang ◽  
J.H. Chen ◽  
Chen Shen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Gate Dielectrics ◽  
Gate Electrode ◽  
Metal Gate ◽  
High K

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1987-1992 ◽  
Author(s):  
Shiyang Zhu ◽  
H.Y. Yu ◽  
J.D. Chen ◽  
S.J. Whang ◽  
J.H. Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Gate Dielectric ◽  
Gate Electrode ◽  
Metal Gate ◽  
High K ◽  
High K Gate Dielectric

Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode

2004 ◽  
Vol 25 (5) ◽  
pp. 268-270 ◽  
Author(s):  
S. Zhu ◽  
H.Y. Yu ◽  
S.J. Whang ◽  
J.H. Chen ◽  
C. Shen ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Gate Dielectrics ◽  
Gate Electrode ◽  
Metal Gate

Low Temperature Post-Annealing of ZnO Thin-Film Transistors with High-k Gate Dielectrics

2019 ◽  
Vol 16 (9) ◽  
pp. 315-322 ◽  
Author(s):  
Henry J. H. Chen ◽  
Barry B. Yeh ◽  
Wei-Yang Chou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
Post Annealing ◽  
High K
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