Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance
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2019 ◽
Vol 45
(21)
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pp. 29
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2018 ◽
Vol 6
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pp. 797-802
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1991 ◽
Vol 9
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pp. 2861
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2021 ◽
Vol 30
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pp. 436-440