Effect of mole fraction, doping concentration and gate length on the electrical characteristics of nanoelectronic High Electron Mobility Transistor

2019 ◽  
Vol 18 ◽  
pp. 806-811
Author(s):  
Sanjib Kalita ◽  
Subhadeep Mukhopadhyay
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Doping Concentration ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

Characterization of AlGaN/GaN High Electron Mobility Transistor Grown on Silicon Carbide Devices with a Gate Length Lg = 0.15 μm

2011 ◽  
Vol 9 (6) ◽  
pp. 2178-2181 ◽  
Author(s):  
Malek Gassoumi ◽  
Mohamed Mongi Ben Salem ◽  
Salah Saadaoui ◽  
Walf Chikhaoui ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

Quarter-micron gate length microwave high electron mobility transistor

1983 ◽  
Vol 19 (21) ◽  
pp. 894 ◽  
Author(s):  
P.C. Chao ◽  
T. Yu ◽  
P.M. Smith ◽  
S. Wanuga ◽  
J.C.M. Hwang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility
Sign in / Sign up

Export Citation Format

Share Document