Dynamic redistribution of the electric field of the channel in AlGaN∕GaN high electron mobility transistor with nanometer-scale gate length
2009 ◽
Vol 24
(3)
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pp. 035013
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2019 ◽
Vol 45
(21)
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pp. 29
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2018 ◽
Vol 6
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pp. 797-802
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1991 ◽
Vol 9
(6)
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pp. 2861
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