DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2292-2295 ◽  
Author(s):  
Sakib M. Muhtadi ◽  
S. M. Sajjad Hossain ◽  
Ashraful G. Bhuiyan ◽  
K. Sugita ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Rf Performance

Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor

2010 ◽  
Vol 159 ◽  
pp. 342-347 ◽  
Author(s):  
T.R. Lenka ◽  
A.K. Panda
Keyword(s):  
Conduction Band ◽  
Electron Mobility ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Consistent ◽  
Band Profile ◽  
Alloy Disorder ◽  
Rf Performance

In this paper, there is an attempt to present the two dimensional electron gas (2DEG) transport characteristics of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor (HEMT) using a self-consistent numerical method for calculating the conduction-band profile and subband structure. The subband calculations take into account the piezoelectric and spontaneous polarization effects and the Hartree and exchange-correlation interaction. Here the dependency of conduction band profile, subband energies, 2DEG sheet concentration and sheet resistance on various Al mole fractions of AlxGa1-xN barrier layer are presented by incorporating simulation as well as available experimental data. Introduction of very thin binary AlN layer at the heterojunction of AlxGa1-xN/GaN resulting high mobility at high sheet charge densities by increasing the effective and decreasing alloy disorder scattering. Devices based on this structure exhibit good DC and RF performance as an increase of . Owing to high 2DEG density , the proposed device leads to operate in microwave and millimeter wave applications.

scholarly journals DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

2020 ◽  
Vol 10 (2) ◽  
pp. 1248
Author(s):  
Amin Boursali ◽  
Ahlam Guen-Bouazza ◽  
Choukria Sayah
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Inp Substrate ◽  
Rf Performance ◽  
20 Nm ◽  
Tcad Simulations

lnAlAs/lnGaAs/InP high electron mobility transistor (HEMT) offers excellent high frequency operation.In this work,the DC and RF performance of a 20 nm gate length enhancement mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) on InP substrate are presented.The SILVACO-TCAD simulations performed at room temperature using the appropriate model sshowed that the studied device exhibit excellent pinch-off characteristics, with a maximum transconductance of 1100ms/mm, a threshold voltage of 0,62V, and an Ion/Ioff ratio of 2.106. The cut-off frequency and maximum frequency of oscillation are 980 GHz and 1.3THz respectively. These promising results allow us to affirm that this device is intended to be used in high frequency applications.

scholarly journals Design and Parametric Analysis of GaN on Silicon High Electron Mobility Transistor for RF Performance Enhancement

2021 ◽  
Author(s):  
Jeetendra Singh ◽  
Archana Verma ◽  
Vijay Kumar Tewari ◽  
Shailendra Singh
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
Performance Enhancement ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Channel Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Rf Performance ◽  
The Impact

Abstract The need of performance enhancement at the RF and millimeter wave is highly desirable to eliminate the heating effects and power dissipation. Silicon substarte found to be a suitable candidate which reduces about 70% channel temperature than sapphire. To achieve high performance, a GaN on the Silicon substrate high electron mobility transistor is designed and its various performance paramters are analyzed by varying the design specifications. Moreover, the problem of blocking voltage improvement is resolved by epitaxial design approach. Since, threshold voltage, doping-level, work-function of gate material and channel length are considered as some of the important parameters while device modeling. Therefore, the impact of these parameters is examined and analyzed to enehace the performance and reliability of the device for RF applications. The performance parameters like trans-conductance, drain current curves are plotted at different state of device physical and electrical parameters. Results exhibits maximum value of transconductance gm=13 milli-mho, minimum gate capacitance Cg=0.5pf, wheras Vth is varied between − 0.25 volts to 0.25 volts.

Sign in / Sign up

Export Citation Format

Share Document