Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer

2012 ◽  
Vol 33 (6) ◽  
pp. 836-838 ◽  
Author(s):  
E. S. Sundholm ◽  
R. E. Presley ◽  
K. Hoshino ◽  
C. C. Knutson ◽  
R. L. Hoffman ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Silicon Oxide ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Oxide Barrier

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

2006 ◽  
Vol 45 (5B) ◽  
pp. 4303-4308 ◽  
Author(s):  
Kenji Nomura ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

Silicon Oxide Barrier Films Deposited on Polycarbonate Substrates in Pulsed Plasmas

2019 ◽  
Vol 40 (2) ◽  
pp. 607-623
Author(s):  
Shaham Shafaei ◽  
Lanti Yang ◽  
Marcel Rudolph ◽  
Peter Awakowicz
Keyword(s):  
Silicon Oxide ◽  
Pulsed Plasmas ◽  
Barrier Films ◽  
Oxide Barrier

Native Oxide Barrier Layer for Selective Electroplated Metallization of Silicon Heterojunction Solar Cells

Solar RRL ◽  
2019 ◽  
Vol 3 (6) ◽  
pp. 1900006 ◽  
Author(s):  
Thibaud Hatt ◽  
Sven Kluska ◽  
Mananchaya Yamin ◽  
Jonas Bartsch ◽  
Markus Glatthaar
Keyword(s):  
Solar Cells ◽  
Barrier Layer ◽  
Native Oxide ◽  
Heterojunction Solar Cells ◽  
Oxide Barrier ◽  
Silicon Heterojunction Solar Cells

scholarly journals Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 462 ◽  
Author(s):  
Seohan Kim ◽  
Doukyun Kim ◽  
Jayoung Byeon ◽  
Jaehong Lim ◽  
Jaeyong Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Phonon Dispersion ◽  
Oxide Semiconductor ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Display Devices ◽  
Amorphous Oxide Semiconductor ◽  
Transparent Display ◽  
Te Material

It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (μ) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In−Zn−O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was estimated to have poor κ and high electrical conductivity compared to crystalline In2O3:Sn (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in transparent display devices.

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