Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface

2016 ◽  
Vol 37 (9) ◽  
pp. 1193-1196 ◽  
Author(s):  
Y. Zheng ◽  
F. Yang ◽  
L. He ◽  
Y. Yao ◽  
Z. Shen ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
High Quality ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy

2006 ◽  
Vol 203 (7) ◽  
pp. 1872-1875 ◽  
Author(s):  
Seung Jae Hong ◽  
Patrick Chapman ◽  
Philip T. Krein ◽  
Kyekyoon (Kevin) Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

Selective area growth of high quality InP on Si (001) substrates

2010 ◽  
Vol 97 (12) ◽  
pp. 121913 ◽  
Author(s):  
G. Wang ◽  
M. R. Leys ◽  
R. Loo ◽  
O. Richard ◽  
H. Bender ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
High Quality ◽  
Selective Area ◽  
Area Growth

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

2017 ◽  
Vol 64 (4) ◽  
pp. 1554-1560 ◽  
Author(s):  
Liang He ◽  
Fan Yang ◽  
Liuan Li ◽  
Zijun Chen ◽  
Zhen Shen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Threshold ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates

2014 ◽  
Vol 105 (9) ◽  
pp. 091902 ◽  
Author(s):  
S. Albert ◽  
A. Bengoechea-Encabo ◽  
J. Zuniga-Perez ◽  
P. de Mierry ◽  
P. Val ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
High Quality ◽  
Selective Area ◽  
Area Growth

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

2013 ◽  
Vol 7 (1) ◽  
pp. 016502 ◽  
Author(s):  
Yao Yao ◽  
Zhiyuan He ◽  
Fan Yang ◽  
Zhen Shen ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Growth Technique ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

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