High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

2017 ◽  
Vol 64 (4) ◽  
pp. 1554-1560 ◽  
Author(s):  
Liang He ◽  
Fan Yang ◽  
Liuan Li ◽  
Zijun Chen ◽  
Zhen Shen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Threshold ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy

2006 ◽  
Vol 203 (7) ◽  
pp. 1872-1875 ◽  
Author(s):  
Seung Jae Hong ◽  
Patrick Chapman ◽  
Philip T. Krein ◽  
Kyekyoon (Kevin) Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface

2016 ◽  
Vol 37 (9) ◽  
pp. 1193-1196 ◽  
Author(s):  
Y. Zheng ◽  
F. Yang ◽  
L. He ◽  
Y. Yao ◽  
Z. Shen ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
High Quality ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

2013 ◽  
Vol 7 (1) ◽  
pp. 016502 ◽  
Author(s):  
Yao Yao ◽  
Zhiyuan He ◽  
Fan Yang ◽  
Zhen Shen ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Growth Technique ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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