Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

ABSTRACTScaling studies have demonstrated that Phase Change Random Access Memory (PCRAM) is one of the most promising candidates for future non-volatile memory applications. The search for suitable phase change materials with optimized properties is therefore actively pursuit. In this paper, SET (crystallization) characteristics of an ultra fast switching material Ge15Sb85 in phase change memory bridge cell devices are presented. It was found that reproducible switching between two stable states with one decade resistance contrast and current pulses as short as 10 ns for SET and RESET (re-amorphization) operation is possible. Particular emphasis was placed on the difference in crystallization kinetics between the as-deposited and melt-quenched amorphous phase. Evidence is given for the existence of an electrical field as the critical parameter for threshold switching rather than a threshold voltage. For Ge15Sb85 a threshold switching field of 9MV/m was measured and it was shown that switching from the melt-quenched amorphous phase to the crystalline phase is about 600 times faster than crystallization from the as-deposited amorphous phase.

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Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

Nano Research ◽

10.1007/s12274-017-1542-2 ◽

2017 ◽

Vol 10 (10) ◽

pp. 3295-3302 ◽

Cited By ~ 5

Author(s):

Qing Luo ◽

Xiaoxin Xu ◽

Hangbing Lv ◽

Tiancheng Gong ◽

Shibing Long ◽

...

Keyword(s):

Band Structure ◽

High Density ◽

Memory Array ◽

Highly Uniform ◽

Nonlinear Selection

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Highly Reliable Memory Operation of High Density Three-Terminal Thyristor Random Access Memory

10.21203/rs.3.rs-585213/v2 ◽

2021 ◽

Author(s):

Hyangwoo Kim ◽

Hyeonsu Cho ◽

Hyeon-Tak Kwak ◽

Myunghae Seo ◽

Seungho Lee ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

High Density ◽

Data Retention ◽

Access Memory ◽

Cathode Voltage ◽

Cross Point ◽

Memory Array ◽

Retention Characteristics ◽

Power Operation

Abstract Three-terminal (3-T) thyristor random-access memory is explored for a next generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (VGC,ST) and anode- cathode voltage (VAC,ST) in the standby state for superior data retention characteristics and low-power operation. The device with the optimized VGC,ST of -0.4 V and VAC,ST of 0.6 V shows the continuous data retention capability without refresh operation with a low standby current of 1.14 pA. In addition, a memory array operation scheme of 3-T TRAM is proposed to address array disturbance issues. The presented array operation scheme can efficiently minimize program, erase and read disturbances on unselected cells by adjusting gate-cathode voltage. The standby voltage turns out to be beneficial to improve retention characteristics: over 10 s. With the proposed memory array operation, 3-T TRAM can provide excellent data retention characteristics and high-density memory configurations comparable with or surpass conventional dynamic random-access memory (DRAM) technology.

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