Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

2019 ◽  
Vol 40 (7) ◽  
pp. 1092-1095 ◽  
Author(s):  
Seungyeol Oh ◽  
Jeonghwan Song ◽  
In Kyeong Yoo ◽  
Hyunsang Hwang
2019 ◽  
Vol 954 ◽  
pp. 14-20 ◽  
Author(s):  
Yi Wang ◽  
Yun Li ◽  
Zhi Fei Zhao ◽  
Ping Zhou ◽  
Zhi Jun Yin ◽  
...  

The effects of annealing on epitaxial graphene on SiC substrates with various conditions are investigated. Results show that high pressure hydrogen atmosphere is more effective to decouple the epitaxial graphene from SiC substrate than that of a relative lower pressure process. Besides, the characteristic 2D-peak of graphene in Raman spectra disappeared with an annealing temperature 1000 °C, which means that the epitaxial graphene layer was decomposed in this condition. The study also shows that the decomposition of graphene can be effectively suppressed by increasing carbon vapor partial pressure through introducing ethylene during high pressure hydrogen annealing at 1000 °C. And the epitaxial graphene is successfully transferred to quasi free standing graphene by the annealing with an appropriate flow of ethylene.


2013 ◽  
Vol 60 (8) ◽  
pp. 2537-2541 ◽  
Author(s):  
Se-I Oh ◽  
Godeuni Choi ◽  
Hyunsang Hwang ◽  
Wu Lu ◽  
Jae-Hyung Jang

2005 ◽  
Author(s):  
Yunik Son ◽  
Md.Shahriar Rahman ◽  
Kiju Im ◽  
Man Chang ◽  
Hokyong Park ◽  
...  

2018 ◽  
Vol 6 ◽  
pp. 164-168 ◽  
Author(s):  
Yun Ji Kim ◽  
Woojin Park ◽  
Jin Ho Yang ◽  
Yonghun Kim ◽  
Byoung Hun Lee

2016 ◽  
Vol 16 (5) ◽  
pp. 4758-4761
Author(s):  
Jeonghwan Song ◽  
Daeseok Lee ◽  
Jiyong Woo ◽  
Euijun Cha ◽  
Sangheon Lee ◽  
...  

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