600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V
2019 ◽
Vol 40
(11)
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pp. 1792-1795
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2007 ◽
Vol 28
(3)
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pp. 217-219
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2003 ◽
Vol 50
(6)
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pp. 1548-1550
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1995 ◽
Vol 42
(1)
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pp. 116-122
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