Hf₀.₅Zr₀.₅O₂ Ferroelectric Embedded Dual-Gate MoS₂ Field Effect Transistors for Memory Merged Logic Applications
2021 ◽
Vol 326
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pp. 128835
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2020 ◽
Vol 31
(7)
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pp. 5485-5491
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1967 ◽
Vol 13
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pp. 72-81
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1990 ◽
Vol 33
(9)
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pp. 1211-1213
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1971 ◽
Vol 4
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pp. 58-60
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