scholarly journals A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak

2021 ◽  
pp. 1-1
Author(s):  
Edward Van Sieleghem ◽  
Andreas Suss ◽  
Pierre Boulenc ◽  
Jiwon Lee ◽  
Gauri Karve ◽  
...  
Keyword(s):  
Electric Field ◽  
Near Infrared ◽  
Single Photon ◽  
Uniform Electric Field ◽  
Avalanche Diode ◽  
Field Peak

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

Investigation for Toroidal Microfluidic Vortices Generated by a Laser Illumination Application in an Uniform Electric Field

2011 ◽  
Author(s):  
Jae-Sung Kwon ◽  
Steven T. Wereley
Keyword(s):  
Electric Field ◽  
Laser Power ◽  
Near Infrared ◽  
Coupling Effect ◽  
Constant Electric Field ◽  
Rapid Change ◽  
Field Potential ◽  
Uniform Electric Field ◽  
Micro Particle Image Velocimetry ◽  
Flow Vorticity

Using micro particle image velocimetry (μPIV) [1], we visualize and analyze strong toroidal microfluidic vortices generated when a near-infrared (1064 nm) laser beam and an alternating current (AC) electric field is simultaneously applied to a chip. The vortices exhibit a source type behavior in the plane normal to the electric field and the flow vorticity is characterized as a function of the electric field potential, electrical AC frequency and laser power. At a constant AC frequency of 9 kHz, the flow vorticity increase as the square of the electric field strength. At constant electric field, the flow vorticity does not change appreciably in 10–100 kHz range and it decreases at larger frequencies (>500 kHz) until when Brownian motion dominates the movement of the 3μm tracer particles. At constant electrical frequency and voltage of 9 kHz and 20Vpp, the flow vorticity remarkably increases as the laser power increases from 20 to 100mW, due to the rapid change of the temperature gradient inside a fluid and its coupling effect with the applied electric field.

The design and characterization of high photon detection efficiency CMOS single-photon avalanche diode

2018 ◽  
Vol 32 (25) ◽  
pp. 1850302
Author(s):  
Wei Wang ◽  
Ting Chen ◽  
Yongchun He ◽  
Mengjia Huang ◽  
Hao Yang ◽  
...  
Keyword(s):  
Low Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Uniform Electric Field ◽  
Cmos Process ◽  
Guard Ring ◽  
Voltage Standard ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

The high photon detection efficiency (PDE) single-photon avalanche diode (SPAD) designed with a low voltage standard 0.18 [Formula: see text]m CMOS process is investigated in detail. The proposed CMOS SPAD is with P+/N-well junction structure, and its multiplication region is surrounded by a virtual guard ring, with which the premature edge avalanche breakdown can be prevented. The analytical and simulation results show that the CMOS SPAD has a uniform electric field distribution in P+/N-well junction, and the breakdown voltage is as low as 8.2 V, the PDE is greater than 40% at the wavelength range of 650–950 nm, at a low excess bias voltage (light intensity is about 0.001 W/cm2), and the peak PDE at 800 nm is about 48%, the relatively low dark count rate (DCR) of 1.4 KHz is obtained.

scholarly journals Fast-Gated Single-Photon Avalanche Diode for Wide Dynamic Range Near Infrared Spectroscopy

2010 ◽  
Vol 16 (4) ◽  
pp. 1023-1030 ◽  
Author(s):  
Alberto Dalla Mora ◽  
Alberto Tosi ◽  
Franco Zappa ◽  
Sergio Cova ◽  
Davide Contini ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Near Infrared Spectroscopy ◽  
Near Infrared ◽  
Dynamic Range ◽  
Single Photon ◽  
Wide Dynamic Range ◽  
Avalanche Diode

scholarly journals Simulation Study of Silicon-Based Single-Photon Avalanche Diodes with Double Buried Layers and Deep Trench Electrodes

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1176
Author(s):  
Yanyan Du ◽  
Bo Li ◽  
Xu Wang
Keyword(s):  
Electric Field ◽  
Near Infrared ◽  
Single Photon ◽  
Depletion Region ◽  
Simulation Software ◽  
Oxide Semiconductor ◽  
Infrared Band ◽  
Deep Trench ◽  
Buried Layers ◽  
Silicon Based

In this paper we present a study of a silicon-based Single-Photon Avalanche Diode (SPAD) in the near-infrared band with double buried layers and deep trench electrodes fabricated by the complimentary metal–oxide semiconductor (CMOS) technology. The deep trench electrodes aim to promote the movement of carriers in the device and reduce the transit time of the photo-generated carrier. The double buried layers are introduced to increase the electric field in the avalanche area and withstand a larger excess bias voltage as its larger depletion region. The semiconductor device simulation software TCAD is used to simulate the performance of this SPAD model, such as the I-V characteristic, the electric field and the Photon Detection Efficiency (PDE). Further optimization of the structure are studied with influence factors such as the doping concentration and depletion region thickness. Based on the results in this study, the designed a structure that can provide a high detecting efficiency in the near-infrared band.

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