A 2–40 GHz Active Balun Using 0.13 $\mu{\rm m}$ CMOS Process

2009 ◽  
Vol 19 (3) ◽  
pp. 164-166 ◽  
Author(s):  
Bo-Jiun Huang ◽  
Bo-Jr Huang ◽  
Kun-You Lin ◽  
Huei Wang
Keyword(s):  
Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1351
Author(s):  
Daniel Pietron ◽  
Tomasz Borejko ◽  
Witold Adam Pleskacz

A new 1.575 GHz active balun with a classic double-balanced Gilbert mixer for global navigation satellite systems is proposed herein. A simple, low-noise amplifier architecture is used with a center-tapped inductor to generate a differential signal equal in amplitude and shifted in phase by 180°. The main advantage of the proposed circuit is that the phase shift between the outputs is always equal to 180°, with an accuracy of ±5°, and the gain difference between the balun outputs does not change by more than 1.5 dB. This phase shift and gain difference between the outputs are also preserved for all process corners, as well as temperature and voltage supply variations. In the balun design, a band calibration system based on a switchable capacitor bank is proposed. The balun and mixer were designed with a 110 nm CMOS process, consuming only a 2.24 mA current from a 1.5 V supply. The measured noise figure and conversion gain of the balun and mixer were, respectively, NF = 7.7 dB and GC = 25.8 dB in the band of interest.


2012 ◽  
Vol 195-196 ◽  
pp. 84-89
Author(s):  
Da Hui Zhang ◽  
Ze Dong Nie ◽  
Feng Guan ◽  
Lei Wang

A low-power, wideband signaling receiver for data transmission through a human body was presented in this paper. The receiver utilized a novel implementation of energy-efficient wideband impulse communication that uses the human body as the transmission medium, provides low power consumption, high reception sensitivity. The receiver consists of a low-noise amplifier, active balun, variable gain amplifier (VGA) Gm-C filter, comparator, and FSK demodulator. It was designed with 0.18um CMOS process in an active area of 1.54mm0.414mm. Post-simulation showed that the receiver has a gain range of-2dB~40dB. The receiver consumes 4mW at 1.8V supply and achieves transmission bit energy of 0.8nJ/bit.


2019 ◽  
Vol 7 (1) ◽  
Author(s):  
Frederick Ray I. Gomez ◽  
John Richard E. Hizon ◽  
Maria Theresa G. De Leon

The paper presents a design and simulation study of three active balun circuits implemented in a standard 90nm Complementary Metal-Oxide Semiconductor (CMOS) process namely: (1) common-source/drain active balun; (2) common-gate with common-source active balun; and (3) differential active balun.  The active balun designs are intended for Worldwide Interoperability for Microwave Access (WiMAX) applications operating at frequency 5.8GHz and with supply voltage of 1V.  Measurements are taken for parameters such as gain difference, phase difference, and noise figure.  All designs achieved gain difference of less than 0.23dB, phase difference of 180° ± 7.1°, and noise figure of 7.2–9.85dB, which are comparable to previous designs and researches.  Low power consumption attained at the most 4.45mW.


Author(s):  
Frederick Ray I. Gomez ◽  
Maria Theresa G. De Leon ◽  
John Richard E. Hizon

This paper presents a design and simulation study of a common-gate with common-source active balun circuit implemented in a standard 90-nm complementary metal-oxide semiconductor (CMOS) process.  The active balun design is intended for worldwide interoperability for microwave access (WiMAX) application, with operating frequency of 5.8 GHz and supply voltage of 1 V.  Measurements are taken for parameters namely gain difference, phase difference, and noise figure.  The common-source active balun design achieved a minimal gain difference of  0.04 dB, phase difference of 180 ± 1.5 degrees, and noise figure of 8.76 dB, which are comparable to past active balun designs and researches.  The design eventually achieved a low power consumption of 4.45 mW.


Author(s):  
Frederick Ray I. Gomez ◽  
John Richard E. Hizon ◽  
Maria Theresa G. De Leon

The paper presents a design and simulation study of a differential active balun circuit implemented in a standard 90 nm complementary metal-oxide semiconductor (CMOS) process.  The active balun design is intended for Worldwide Interoperability for Microwave Access (WiMAX) applications operating at frequency 5.8 GHz and with supply voltage of 1V.  Measurements are taken for parameters such as gain difference, phase difference, and noise figure.  The differential active balun design achieved gain difference of less than 0.23 dB, phase difference of 180° ± 3.4°, and noise figure of 9.78 dB, which are comparable to past active balun designs and researches.  Lastly, the design achieved a low power consumption of 3.6 mW.


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