State-of-the-Art Inkjet-Printed Metal-Insulator-Metal (MIM) Capacitors on Silicon Substrate

2015 ◽  
Vol 25 (1) ◽  
pp. 13-15 ◽  
Author(s):  
Chiara Mariotti ◽  
Benjamin S. Cook ◽  
Luca Roselli ◽  
Manos M. Tentzeris
Keyword(s):  
Silicon Substrate ◽  
State Of The Art ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

MIM Capacitor Reliability Fault Identification Using IR Microthermography and Automated De-processing: A Case Study

2003 ◽  
Author(s):  
J. Steele ◽  
T. Remmel ◽  
S. Wilson ◽  
M. Nair ◽  
P. Sanders ◽  
...  
Keyword(s):  
Fault Identification ◽  
Reliability Testing ◽  
Metal Insulator ◽  
Temperature Conditions ◽  
Optical Inspection ◽  
Metal Insulator Metal ◽  
Ir Emission ◽  
Mim Capacitors

Abstract Advanced RF IC’s incorporate numerous components along with the CMOS circuitry. One component is a metal-insulator-metal (MIM) capacitor. Test capacitors have been stressed using accelerated voltage and temperature conditions to assess the long-term reliability. This paper describes a methodology for evaluating the MIM capacitors that have failed during reliability testing. IR microthermography was developed to detect leakage locations in areas that are not visible to optical inspection or standard emission microscopes. These areas were deprocessed to correlate the IR emission and physical defect locations. This information is utilized to understand the failures and improve the reliability.

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