Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

scholarly journals Leakage current asymmetry and resistive switching behavior of SrTiO3

2012 ◽  
Vol 101 (17) ◽  
pp. 173507 ◽  
Author(s):  
Shahin A. Mojarad ◽  
Jonathan P. Goss ◽  
Kelvin S. K. Kwa ◽  
Zhiyong Zhou ◽  
Raied A. S. Al-Hamadany ◽  
...  
Keyword(s):  
Leakage Current ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Resistive Switching Behavior of Ti/ZnO/Mo Thin Film Structure for Nonvolatile Memory Applications

2015 ◽  
Vol 659 ◽  
pp. 588-592
Author(s):  
Rachasak Sakdanuphab ◽  
Aparporn Sakulkalavek
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Root Mean Square Roughness ◽  
Soda Lime Glass ◽  
Resistive State ◽  
Operating Voltage ◽  
Resistive Switching Behavior ◽  
Metal Insulator Metal

In this work, we study the resistive switching behavior of a new model metal/insulator/metal (MIM) junction. The MIM junction consists of titanium front electrode, zinc oxide insulation layer and molybdenum back electrode. The Ti/ZnO/Mo structure was prepared on 3x3 cm2 soda lime glass substrates using dc magnetron sputtering for metal electrodes and rf magnetron sputtering for ZnO layer. The thicknesses of Ti, ZnO and Mo films were controlled at 200nm, 50nm and 500nm, respectively. The crystalline structure and microstructure of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The current-voltage (I-V) characteristics of the device cells were obtained by using dc voltage sweep mode. The XRD spectra of the devices show Mo(100) and ZnO(002) preferred orientations. The Mo and ZnO film surfaces exhibit dense crystallized grains with the root mean square roughness (RMS) of 1.0 and 1.4 nm, respectively. The device cells behave unipolar resistive switching characteristics with reversible, controllable and reliability within 150 cycles. The difference between high resistive state (HRS) and low resistive state (LRS) is about 103 times. A low operating voltage range of 0.50-0.60V is obtained for switching from HRS to LRS at a current compliance of 10mA. The new MIM structure was demonstrated and suggested a potential to use as nonvolatile memory application.

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