Novel Integration of Metal–Insulator–Metal (MIM) Capacitors Comprising Perovskite-type Dielectric and Cu Bottom Electrode on Low-Temperature Packaging Substrates

2008 ◽  
Vol 29 (1) ◽  
pp. 31-33 ◽  
Author(s):  
E. B. Liao ◽  
T. H. Choong ◽  
W. G. Zhu ◽  
K. W. Teoh ◽  
P. C. Lim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Bottom Electrode ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Perovskite Type ◽  
Mim Capacitors

Mitigation of Dielectric Charging in MEMS Capacitive Switches with Stacked TiO2/Y2O3 Insulator Film

2018 ◽  
Author(s):  
D. Birmpiliotis ◽  
M. Koutsoureli ◽  
L. Buhagier ◽  
G. Papaioannou ◽  
A. Ziaei
Keyword(s):  
Bottom Electrode ◽  
Single Layer ◽  
Capacitive Switches ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Low Dielectric ◽  
Insulator Film ◽  
Metal Insulator Metal ◽  
Mim Capacitors

Abstract Metal-insulator-metal (MIM) capacitors with single TiO2 and a TiO2/Y2O3 stack are used as insulator films in MIM and MEMS, respectively, are explored. It is found that, under electron injection from bottom electrode, the TiO2 MIM capacitors demonstrate resistive switching with a magnitude of leakage currents not usable for MEMS application. The deposition of a stacked TiO2/Y2O3 dielectric film improves the MEMS performance without compromising the low dielectric charging of TiO2 single layer.

(Invited) ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Applications

2019 ◽  
Vol 41 (2) ◽  
pp. 53-61 ◽  
Author(s):  
Christian Wenger ◽  
Mindaugas Lukosius ◽  
Tom Blomberg ◽  
Adulfas Abrutis ◽  
Peter Baumann ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Perovskite Type

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal–insulator–metal capacitor

2010 ◽  
Vol 518 (18) ◽  
pp. 5272-5277 ◽  
Author(s):  
Ming-Yen Li ◽  
Bin-Siang Tsai ◽  
Pei-Chuen Jiang ◽  
Hsiao-Che Wu ◽  
Yung-Hsien Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Insulator ◽  
Structure And Property ◽  
Metal Insulator Metal ◽  
Property Changes

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

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