New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

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Design of radio frequency metal-insulator-metal (MIM) capacitors

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1434989 ◽

2005 ◽

Cited By ~ 4

Author(s):

M.W.C. Goh ◽

Queennie Lim ◽

R.A. Keating ◽

A.V. Kordesch ◽

Y.B.M. Yusof

Keyword(s):

Radio Frequency ◽

Metal Insulator ◽

Metal Insulator Metal ◽

Mim Capacitors

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Study of leakage current in metal–insulator–metal Mg–Al co-doped barium strontium titanate thin films as a function of temperature and applied field

Thin Solid Films ◽

10.1016/j.tsf.2008.04.059 ◽

2008 ◽

Vol 516 (23) ◽

pp. 8441-8446 ◽

Cited By ~ 5

Author(s):

M.C. Kao ◽

S.Y. Lee ◽

H.Z. Chen ◽

S.L. Young

Keyword(s):

Thin Films ◽

Leakage Current ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Applied Field ◽

Metal Insulator ◽

Barium Strontium ◽

Metal Insulator Metal ◽

Co Doped

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The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

Facta universitatis - series Electronics and Energetics ◽

10.2298/fuee1404621p ◽

2014 ◽

Vol 27 (4) ◽

pp. 621-630 ◽

Cited By ~ 3

Author(s):

Albena Paskaleva ◽

Boris Hudec ◽

Peter Jancovic ◽

Karol Fröhlich ◽

Dencho Spassov

Keyword(s):

Resistive Switching ◽

Deposition Process ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Conductive Filament ◽

Metal Insulator ◽

Dielectric Thickness ◽

Metal Insulator Metal ◽

Tin Metal ◽

Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

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