InGaN Light-Emitting Diode With Quasi-Quantum-Dot-Shaped Active Layer Using SiCN Interfacial Layer

2007 ◽  
Vol 19 (1) ◽  
pp. 24-26 ◽  
Author(s):  
Eun-Hyun Park ◽  
Soo-Kun Jeon ◽  
Chang-Tae Kim ◽  
Dong-Hwan Kim ◽  
Joong-Seo Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Active Layer ◽  
Interfacial Layer ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer

2012 ◽  
Vol 116 (18) ◽  
pp. 10181-10185 ◽  
Author(s):  
Di-Yan Wang ◽  
I-Sheng Wang ◽  
I-Sheng Huang ◽  
Yun-Chieh Yeh ◽  
Shao-Sian Li ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Quantum Dot ◽  
Interfacial Layer ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Solution Processable

GaN quantum dot UV light emitting diode

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Current Injection ◽  
High Density ◽  
Light Emitting ◽  
Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

Synchronization of Chaotic Quantum Dot Light Emitting Diodes under Optical Feedback Effect

2020 ◽  
pp. 144-148
Keyword(s):  
Quantum Dot ◽  
Delay Time ◽  
Chaos Synchronization ◽  
Optical Feedback ◽  
Light Emitting Diode ◽  
Feedback Effect ◽  
Complete Synchronization ◽  
Light Emitting ◽  
Coupling Methods ◽  
Coupling Parameters

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.

InP-Based Quantum Dot Light-Emitting Diode with a Blended Emissive Layer

2021 ◽  
pp. 1577-1585
Author(s):  
Moon Gyu Han ◽  
Yeonkyung Lee ◽  
Ha-il Kwon ◽  
Heejae Lee ◽  
Taehyung Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Emissive Layer
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