Lateral Dopant Diffusion Length Measurements Using Silicon Microring Resonators

The diffusion length of thermal neutrons in water has been measured at various temperatures between 18 and 255 °C, the source being 124 Sb-Be (25 keV). Diffusion length measurements were also made in water with three boric acid concentrations and with water poisoned with a cadmium sulphate solution, the measurements being taken over a temperature range of 18 to 200 °C. The variation with temperature of the diffusion coefficient of water was determined from the experiments with poisoned water. A value 0.324 + 0.006 barn was obtained for the 2200 m/s microscopic absorption cross section of hydrogen. Close agreement was found between the experimental results and theoretical predictions based on the Nelkin model for slow neutron scattering.

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Detection of copper contamination in silicon by surface photovoltage diffusion length measurements

Applied Physics Letters ◽

10.1063/1.123280 ◽

1999 ◽

Vol 74 (2) ◽

pp. 278-280 ◽

Cited By ~ 44

Author(s):

Worth B. Henley ◽

Deepak A. Ramappa ◽

Lubek Jastrezbski

Keyword(s):

Diffusion Length ◽

Surface Photovoltage ◽

Copper Contamination ◽

Length Measurements

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Comparison of diffusion length measurements from the flying spot technique and the photocarrier grating method in amorphous thin films

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) ◽

10.1109/wcpec.1994.520026 ◽

2002 ◽

Author(s):

M. Vieira ◽

A. Fantoni ◽

R. Martins ◽

V. Chu ◽

S. Koynov ◽

...

Keyword(s):

Thin Films ◽

Diffusion Length ◽

Amorphous Thin Films ◽

Length Measurements ◽

Flying Spot

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Diffusion length measurements of thin amorphous silicon layers

Microelectronics Reliability ◽

10.1016/0026-2714(90)90126-8 ◽

1990 ◽

Vol 30 (1) ◽

pp. 199-200

Keyword(s):

Amorphous Silicon ◽

Diffusion Length ◽

Length Measurements

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Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using the Photo-Grating Technique

MRS Proceedings ◽

10.1557/proc-638-f14.44.1 ◽

2000 ◽

Vol 638 ◽

Cited By ~ 1

Author(s):

Y. Posada ◽

I. Balberg ◽

L.F. Fonseca ◽

O. Resto ◽

S.Z. Weisz

Keyword(s):

High Intensity ◽

Quantum Confinement ◽

Cluster Size ◽

Diffusion Length ◽

Random Packing ◽

The Other ◽

Length Measurements ◽

Simultaneous Study ◽

Crystallite Diameter ◽

Minority Carriers

AbstractWe have studied the microstructure, the transport and the phototransport properties of the Si crystallites network in Si-SiO2 composites. We have found that in our co-sputtered samples the average crystallite diameter, d, decreases from 40 to 5 nm as the content of the silicon, x, decreases from 80 to 40 volume%, and that the percolation of the network sets is at x ≈ 40 vol%. A simultaneous study of the photoluminescence (PL) shows the, quantum confinement, expected red shift of its peak with increasing d. On the other hand the very strong observed decrease of the PL intensity with x is interpreted here as due to a deconfinement effect that is dominated by the increase in the cluster size of connected Si crystallites. The results suggest that a closed random packing of the Si crystallites will be the preferred network for high intensity electroluminescence.

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