Fabrication of sharp tips with high aspect ratio by surfactant-modified wet etching for the AFM probe

Author(s):  
B. Tang ◽  
K. Sato ◽  
H. Tanaka ◽  
M. A. Gosalvez
2021 ◽  
Author(s):  
Konstantin Nikiforov ◽  
Nikolay Egorov ◽  
Ivan Sokolov ◽  
Valery Strebko ◽  
Vladimir Mikhailovskiy ◽  
...  

Author(s):  
Sudarshan Hegde ◽  
G. K. Ananthasuresh

The focus of this paper is on designing useful compliant micro-mechanisms of high-aspect-ratio which can be microfabricated by the cost-effective wet etching of (110) orientation silicon (Si) wafers. Wet etching of (110) Si imposes constraints on the geometry of the realized mechanisms because it allows only etch-through in the form of slots parallel to the wafer’s flat with a certain minimum length. In this paper, we incorporate this constraint in the topology optimization and obtain compliant designs that meet the specifications on the desired motion for given input forces. Using this design technique and wet etching, we show that we can realize high-aspect-ratio compliant micro-mechanisms. For a (110) Si wafer of 250 μm thickness, the minimum length of the etch opening to get a slot is found to be 866 μm. The minimum achievable width of the slot is limited by the resolution of the lithography process and this can be a very small value. This is studied by conducting trials with different mask layouts on a (110) Si wafer. These constraints are taken care of by using a suitable design parameterization rather than by imposing the constraints explicitly. Topology optimization, as is well known, gives designs using only the essential design specifications. In this work, we show that our technique also gives manufacturable mechanism designs along with lithography mask layouts. Some designs obtained are transferred to lithography masks and mechanisms are fabricated on (110) Si wafers.


2009 ◽  
Vol 145-146 ◽  
pp. 87-90 ◽  
Author(s):  
Antoine Pacco ◽  
Masayuki Wada ◽  
Twan Bearda ◽  
Paul W. Mertens

Nanostructures with high aspect ratios, HAR, (ratio of height to lateral feature size) are of interest for many applications. One of the immediate advantages is the large surface area of these structures. In the field of DRAM manufacturing for example, the capacitance of cylindrical DRAM capacitors increases linearly with height. Wet etching and drying of these fragile high aspect ratio structures without lateral collapse (stiction) is a big challenge for the fabrication of DRAM capacitors. The problem with HAR structures is stiction during drying [1]. In order to reduce stiction by improvement of drying techniques, a good metric to quantify the occurrence of stiction is needed. However, currently used methods like SEM or brightfield defect inspection are extremely time-consuming.


1983 ◽  
Vol 29 ◽  
Author(s):  
D. V. Podlesnik ◽  
H. H. Gilgen ◽  
R. M. Osgood

ABSTRACTDeep-UV, laser-light-assisted, wet etching of compound semiconductors is reported. As ccmpared to results with visible light, the etching rates per unit power density in the ultraviolet are considerably faster; a factor of >30 is seen under typical conditions. A correlation between the UV absorption in different etching solutions and the light-enhanced etching rates is examined. Gratings with 100-nm resolution have been produced and high-aspect-ratio via-holes have been etched.


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