Irreversible deformation of microns thick single crystal silicon in a temperature range of 350–500°C

2013 ◽  
Author(s):  
K. Sato ◽  
A. Sugimoto ◽  
T. Nishimura
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Irreversible Deformation ◽  
Crystal Silicon ◽  
Temperature Range

scholarly journals Фазовый переход alpha-beta в примесной фазе монокристалла кремния SiO-=SUB=-2-=/SUB=-

2021 ◽  
Vol 47 (7) ◽  
pp. 22
Author(s):  
М.У. Каланов ◽  
А.В. Хугаев
Keyword(s):  
Single Crystal ◽  
Thermal Oxidation ◽  
Angular Position ◽  
Single Crystal Silicon ◽  
Silicon Single Crystal ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Temperature Range ◽  
Alpha Beta

Thermal oxidation of a silicon single crystal in the temperature range of 293 – 1293 K was studied using high – temperature X – ray diffraction directly on the beam. An anomaly in the intensity and angular position of diffuse scattering from the surface of the single crystal was found. The anomaly is explained by the oxidation of the silicon surface according to the Dill Grove model, including the process of thermal oxidation and sublimation of the oxide layer depending on temperature. It was found that in the bulk of a single crystal (silicon medium) in this temperature range, there is a - b phase transition in the crystalline phase of silicon dioxide, similar to the a - b transition of quartz in the atmosphere.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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