High Frequency Limitation Of GaAs Transit-Time Diodes

Author(s):  
N. Lee ◽  
Dee-Son Pan
2007 ◽  
Vol 103 (1) ◽  
pp. 156-161 ◽  
Author(s):  
Roman M. Baevsky ◽  
Victor M. Baranov ◽  
Irina I. Funtova ◽  
André Diedrich ◽  
Andrey V. Pashenko ◽  
...  

Impaired autonomic control represents a cardiovascular risk factor during long-term spaceflight. Little has been reported on blood pressure (BP), heart rate (HR), and heart rate variability (HRV) during and after prolonged spaceflight. We tested the hypothesis that cardiovascular control remains stable during prolonged spaceflight. Electrocardiography, photoplethysmography, and respiratory frequency (RF) were assessed in eight male cosmonauts (age 41–50 yr, body-mass index of 22–28 kg/m2) during long-term missions (flight lengths of 162–196 days). Recordings were made 60 and 30 days before the flight, every 4 wk during flight, and on days 3 and 6 postflight during spontaneous and controlled respiration. Orthostatic testing was performed pre- and postflight. RF and BP decreased during spaceflight ( P < 0.05). Mean HR and HRV in the low- and high-frequency bands did not change during spaceflight. However, the individual responses were different and correlated with preflight values. Pulse-wave transit time decreased during spaceflight ( P < 0.05). HRV reached during controlled respiration (6 breaths/min) decreased in six and increased in one cosmonaut during flight. The most pronounced changes in HR, BP, and HRV occurred after landing. The decreases in BP and RF combined with stable HR and HRV during flight suggest functional adaptation rather than pathological changes. Pulse-wave transit time shortening in our study is surprising and may reflect cardiac output redistribution in space. The decrease in HRV during controlled respiration (6 breaths/min) indicates reduced parasympathetic reserve, which may contribute to postflight disturbances.


2009 ◽  
Vol 1 (5) ◽  
pp. 423-429
Author(s):  
Moumita Mukherjee ◽  
Sitesh Kumar Roy

Extensive simulation experiments are carried out for the first time, to study the optical modulation of the high- frequency characteristics of III–V GaN-(gallium nitride) based top-mounted and flip-chip IMPact Avalanche Transit Time (IMPATT) oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of RF power output by almost 15.0% are further observed in case of photo-illuminated FC IMPATT. The study reveals that compared to predominate electron photocurrent in top-mounted IMPATT, photo-generated leakage current dominated by hole in flip-chip IMPATT has more pronounced effect on the GaN-based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the wide band gap semiconductor has been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high-frequency operation. These results are useful for practical realization of optically controlled GaN-based high-power IMPATTs for application in MM-wave communication systems.


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