High dielectric constant Ta/sub 2/O/sub 5/ thin films prepared by rf magnetron sputtering for dynamic random access memory applications

2005 ◽  
Author(s):  
L.Y. Yeh ◽  
J.J. Wang ◽  
J.Y.M. Lee ◽  
J.Y. Hsu ◽  
J.T. Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Magnetron Sputtering ◽  
High Dielectric Constant ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Access Memory ◽  
High Dielectric ◽  
Memory Applications

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

scholarly journals Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

1999 ◽  
Vol 14 (5) ◽  
pp. 1860-1864 ◽  
Author(s):  
C. R. Foschini ◽  
P. C. Joshi ◽  
J. A. Varela ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Current Density ◽  
Chemical Solution Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Access Memory ◽  
Solution Deposition

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 °C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 °C for 60 min. The leakage current density of the films was lower than 10−9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

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