Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

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Preparation of Oxygen-doped and Nitrogen-doped Ge-Sb-Te System Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378882 ◽

2006 ◽

Cited By ~ 1

Author(s):

Shin Kikuchi ◽

Dong Young Oh ◽

Isao Kimura ◽

Yutaka Nishioka ◽

Masahisa Ueda ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Rf Magnetron Sputtering ◽

Access Memory ◽

Nitrogen Doped

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Preparation of Ge-doped SbTe Material Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns

ECS Meeting Abstracts ◽

10.1149/ma2008-02/30/2113 ◽

2008 ◽

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Small Hole ◽

Access Memory

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Investigation on the Scaling Performances of Carbon‐Doped Ge 2 Sb 2 Te 5 Thin Films for Phase Change Random Access Memory in a 40 nm Process

physica status solidi (a) ◽

10.1002/pssa.201900439 ◽

2019 ◽

Vol 216 (22) ◽

pp. 1900439

Author(s):

Shuai Yan ◽

Daolin Cai ◽

Yuan Xue ◽

Yifeng Chen ◽

Yuanguang Liu ◽

...

Keyword(s):

Thin Films ◽

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Carbon Doped

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The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

Applied Physics Letters ◽

10.1063/1.3232237 ◽

2009 ◽

Vol 95 (11) ◽

pp. 112110 ◽

Cited By ~ 15

Author(s):

Seung Wook Ryu ◽

Jong Ho Lee ◽

Young Bae Ahn ◽

Choon Hwan Kim ◽

Bong Seob Yang ◽

...

Keyword(s):

Thin Films ◽

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Switching Voltage ◽

Access Memory ◽

Threshold Switching

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Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb2Te Thin Films for Phase Change Random Access Memory

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.367.26 ◽

2013 ◽

Vol 367 ◽

pp. 26-31

Author(s):

Su Yuan Bai ◽

Zhe Nan Tang ◽

Zheng Xing Huang ◽

Yi Feng Gu

Keyword(s):

Thin Films ◽

Phase Transition ◽

Thermal Conductivity ◽

Phase Change ◽

Composite Films ◽

Random Access ◽

Random Access Memory ◽

Data Retention ◽

Access Memory ◽

Ge Doping

The Ge doped Sb2Te thin films (Ge2Sb2Te5, Ge0.15Sb2Te and Ge0.61Sb2Te) were deposited by magnetron co-sputtering using Ge and Sb2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge0.61Sb2Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge0.61Sb2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.

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