The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

ИССЛЕДОВАНИЕ ЭФФЕКТА ПЕРЕКЛЮЧЕНИЯ И ТРАНСПОРТА ЗАРЯДА В БЕСФОРМОВОЧНОМ МЕМРИСТОРЕ НА ОСНОВЕ НИТРИДА КРЕМНИЯ С РАЗНЫМИ ТИПАМИ МЕТАЛЛА ВЕРХНЕГО ЭЛЕКТРОДА, "Электронная техника. Серия 3. Микроэлектроника"

2020 ◽  
pp. 42-46
Author(s):  
Г.Я. Красников ◽  
О.М. Орлов ◽  
В.В. Макеев
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory ◽  
Ferroelectric Memories ◽  
Change Memory

Мемристорная резистивная память с произвольным доступом (ReRAM, Resistive Random Access Memory) вместе с памятью с изменением фазового состояния (PCM, Phase Change Memory), магниторезистивной памятью с произвольным доступом (MRAM, Magnetoresistive Random Access Memory), сегнетоэлектрической памятью (FeRAM, Ferroelectric Memories) [4] являются востребованными видами энергонезависимой памяти на новых альтернативных принципах. Нитрид кремния является перспективным резистивным переключающим слоем для мемристоров. В данной работе проведено экспериментальное исследование эффекта переключения и переноса заряда в мемристоре на основе нитрида кремния для разных типов металла (Ni, Co, Cu) верхнего электрода.

Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application

2019 ◽  
Vol 8 (4) ◽  
pp. P298-P302 ◽  
Author(s):  
Byeol Han ◽  
Yewon Kim ◽  
Yu-Jin Kim ◽  
Mann-Ho Cho ◽  
Sa-Kyun Rha ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

2011 ◽  
Vol 6 (3-4) ◽  
pp. 227-236 ◽  
Author(s):  
S. A. Kozyukhin ◽  
A. A. Sherchenkov ◽  
V. M. Novotortsev ◽  
S. P. Timoshenkov
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Memory

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

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