scholarly journals A High-Efficiency Dual-Antenna RF Energy Harvesting System Using Full-Energy Extraction With Improved Input Power Response

2021 ◽  
Vol 2 ◽  
pp. 436-444
Author(s):  
Zhaobo Zhang ◽  
Chenchang Zhan ◽  
Man-Kay Law ◽  
Yang Jiang ◽  
Pui-In Mak ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
High Efficiency ◽  
Input Power ◽  
Energy Extraction ◽  
Rf Energy Harvesting ◽  
Full Energy ◽  
Energy Harvesting System ◽  
Rf Energy ◽  
Power Response

scholarly journals Simple Adaptive Rectifier with High Efficiency over a Range of 21 dBm Input Power for RF Energy Harvesting Applications

2021 ◽  
pp. 8-15
Author(s):  
Eman M. Abdelhady ◽  
◽  
Hala M. Abdelkader ◽  
Amr A. Al-Awamry
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
Breakdown Voltage ◽  
Adaptive Design ◽  
High Efficiency ◽  
Power Level ◽  
Input Power ◽  
Rf Energy Harvesting ◽  
High Input Power ◽  
Rf Energy

This paper presents a novel simple adaptive and efficient rectifier for Radio Frequency (RF) energy harvesting applications. Traditional rectifiers have maximum RF-DC Power Conversion Efficiency (PCE) over a narrow range of RF input power due to diode breakdown voltage restrictions. The proposed adaptive design helps to extend the PCE over a wider range of RF input power at 2.45GHz using a simple design. Two alternative paths arecontrolled depending on the RF input power level. Low input power levels activate the first path connected to a single rectifier; low power levels make the diode operate below its breakdown voltage and therefore avoiding PCE degradation. High input power levels activate the second path dividing it into three rectifiers. This keeps input power at each rectifier at a low power level to avoid exceeding the diode break down voltage. Simulated PCE of this work is kept above 50% over a range of 21.4 dBm input power from -0.8dBm to 20.6dBm.

scholarly journals 3.3V DC output at -16dBm sensitivity and 77% PCE rectifier for RF energy harvesting

2019 ◽  
Vol 10 (3) ◽  
pp. 1398
Author(s):  
Astrie Nurasyeila Fifie Asli ◽  
Yan Chiew Wong
Keyword(s):  
Energy Harvesting ◽  
Power Efficiency ◽  
High Efficiency ◽  
Impedance Matching ◽  
High Sensitivity ◽  
Oxide Thickness ◽  
Process Technology ◽  
Rf Energy Harvesting ◽  
Energy Harvesting System ◽  
Rf Energy

<span>This paper presents a high voltage conversion at high sensitivity RF energy harvesting system for IoT applications. The harvesting system comprises bulk-to-source (BTMOS) differential-drive based rectifier to produce a high efficiency RF energy harvesting system. Low-pass upward impedance matching network is applied at the rectifier input to increase the sensitivity and output voltage. Dual-oxide-thickness transistors are used in the rectifier circuit to maintain the power efficiency at each stage of the rectifier. The system is designed using 0.18µm Silterra RF in deep n-well process technology and achieves 4.07V output at -16dBm sensitivity without the need of complex auxiliary control circuit and DC-DC charge-pump circuit. The system is targeted for urban environment.</span>

scholarly journals A Self Threshold Voltage Compensated Rectifier for RF Energy Harvesting using 45nm CMOS Technology

2021 ◽  
Vol 20 ◽  
pp. 244-248
Author(s):  
Chinmoy Bharali ◽  
Manash Pratim Sarma
Keyword(s):  
Energy Harvesting ◽  
Threshold Voltage ◽  
Rise Time ◽  
Input Power ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Rf Energy Harvesting ◽  
Good Efficiency ◽  
Energy Harvesting System ◽  
Rf Energy

A high frequency rectifier is the core of a RF energy harvesting system. It should offer a very good efficiency at low input power levels and to obtain that compensation of threshold voltage is a very important aspect. A threshold compensation scheme for MOSFETS for RF rectifier applicable in RF energy harvesting system is presented in this paper. The switching of the MOSFET is improved with overall enhancement of output rise time of the system. The design emphasis is to have a simplified circuit without the requirement of any external source so as to achieve self-sustainability in the true sense. The rectifier circuit is derived from the basic Dickson charge pump model and is evaluated using 45nm CMOS process. The design has utilized Metal Oxide Semiconductor Field Effect Transistor instead of basic diodes which ensures low power along with fabrication feasibility. The maximum measured PCE of the design is obtained to be 33% at 4dBm input power level at 500Mhz frequency with 1 Kilo Ohm load resistance. The output transient response rise time has been measured to be 85ns at 500MHz and 50.10ns at 1Ghz.

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