Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective

2017 ◽  
Author(s):  
Nicolo Zagni ◽  
Francesco Maria Puglisi ◽  
Giovanni Verzellesi ◽  
Paolo Pavan
Keyword(s):  
Process Parameters ◽  
Thin Body ◽  
Dual Gate

Multi-Threshold Voltages in Ultra-thin-body Devices by Asymmetric Dual-Gate Structure

2015 ◽  
Author(s):  
H. Kim ◽  
J. Park ◽  
M.W. Kwon ◽  
S. Hwang ◽  
B.G. Park
Keyword(s):  
Thin Body ◽  
Threshold Voltages ◽  
Gate Structure ◽  
Dual Gate

Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ED01 ◽  
Author(s):  
Hyungjin Kim ◽  
Jungjin Park ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Byung-Gook Park
Keyword(s):  
Thin Body ◽  
Threshold Voltages ◽  
Gate Structure ◽  
Dual Gate

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate
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