The effects of STI process parameters on the integrity of dual gate oxides

2002 ◽  
Author(s):  
Hoon Lim ◽  
Seung-Jae Lee ◽  
Jong-Mil Youn ◽  
Tae-Hong Ha ◽  
Jin-Ho Kim ◽  
...  
Keyword(s):  
Process Parameters ◽  
Gate Oxides ◽  
Dual Gate

Thin Gate Oxide using a New RTO/-N Clusterable Reactor

1994 ◽  
Vol 342 ◽  
Author(s):  
H. Walk ◽  
L. Deutschmann ◽  
F. Martin ◽  
C. Masurel ◽  
A. Bauer
Keyword(s):  
Reaction Time ◽  
Process Parameters ◽  
Gate Oxide ◽  
Temperature Reaction ◽  
Gas Distribution ◽  
Gate Oxides ◽  
N Content ◽  
Thin Gate Oxide ◽  
Electrical Data

ABSTRACTWe present recent results obtained in thin gate oxides. These oxides are grown in a new clusterable RTP-system for 200mm diameter wafers. The main innovations of the reactor are dealing with the chamber geometry, gas distribution, double pyrometry and dedicated circular lamp array in order to insure an optimized light flow onto the wafer. Analytical and electrical data are given according to several oxidant and nitridant ratios (O2, N2O), The influence of different process parameters such as temperature, reaction time, N-content are discussed.

Influence of Polysilicon Processing on the Quality of Thin RTP/Furnace Gate Oxides

1990 ◽  
Vol 182 ◽  
Author(s):  
J. Haase ◽  
R. Ferretti ◽  
S. Prasad
Keyword(s):  
Process Parameters ◽  
Thin Layers ◽  
Constant Current ◽  
Gate Oxides ◽  
Different Temperatures ◽  
Current Densities ◽  
Phosphorus Doped ◽  
Mos Structures

AbstractThin layers of oxides (10–11nm) were fabricated by rapid thermal (RTP) or furnace oxidation. The RTP oxides were grown at different temperatures and were exposed to a two step post oxidation anneal (POA). The furnace oxides were grown at one temperature and received different POA/s. As gate metallization, in-situ phosphorus-doped polysilicon was used. Post poly anneal (PPA) is carried out in the RTP system using a set of temperatures. After having defined MOS structures by photolithography oxide charges, breakdown voltages and breakdown charges were determined. For different current densities, FN-voltage shift during constant current injection was monitored to make lifetime predictions. Received data were correlated to the different process parameters.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Halogenation of ORMOSIL: A Promising Rout for Tailoring Optical Absorptions

2003 ◽  
Vol 771 ◽  
Author(s):  
Amir Fardad ◽  
Wei Liang ◽  
Yadong Zhang ◽  
Bryson Case ◽  
Shibin Jiang ◽  
...  
Keyword(s):  
Process Parameters ◽  
Sol Gel ◽  
Fiber Amplifiers ◽  
Grignard Reaction ◽  
Coupling Loss ◽  
Beam Splitters ◽  
Silicon Technology ◽  
Sol Gel Process ◽  
Propagation Losses ◽  
Signal Intensities

AbstractFluorinated and photo-imageable precursors are synthesized through a Barbier-Grignard reaction for 1550-nm window. The precursors are used for the sol-gel process of integrated optic components for silica-on-silicon technology. Material compositions and process parameters are optimized to achieve internal absorptions >0.1 dB/cm and propagation losses of about 0.5 dB/cm at 1550 nm. Compact 1×16 Beam splitters are designed and fabricated which exhibit >0.3 dB power uniformity, >0.1 dB PDL and 1.5 dB coupling loss. By hybrid integration of the passive splitters and in-house fiber amplifiers, amplifying splitters are demonstrated at various signal intensities.

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