Design considerations for thin film CuInSe/sub 2/, and other polycrystalline heterojunction solar cells

Author(s):  
R.J. Schwartz ◽  
J.L. Gray ◽  
Y.J. Lee
2020 ◽  
Vol 8 (39) ◽  
pp. 20658-20665 ◽  
Author(s):  
Jae Yu Cho ◽  
SeongYeon Kim ◽  
Raju Nandi ◽  
Junsung Jang ◽  
Hee-Sun Yun ◽  
...  

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.


2000 ◽  
Vol 609 ◽  
Author(s):  
Yoshihiro Hamakawa

ABSTRACTA review is given on a research trajectory of amorphous and microcrystalline semiconductors and their device applications proceeded since 1970. A brief explanation on the motivation to start amorphous semiconductor research is given to produce a new kind of synthetic semiconductor having continuous energy gap controllability with valency electron controllability through our experience of modulation spectroscopy in semiconductors.The first material we have challenged is Si-As-Te chalcogenide semiconductor which has a very wide vitreous region in Gibb's Triangle. A series of systematic experiments has been carried out in the terrestrial environment since 1971, and also within the TT-500A rocket experiment in 1980, and the Spacelab. J experiments FMPT (First Material Processing Test) project in 1992. The second material is hydrogenated amorphous silicon (a-Si:H) and its alloys started in 1976 just after the Garmisch Partenkirchen ICALS-6. With some basic research on the a-Si:H film deposition technology and film quality improvement, our continuous effort to improve the efficiency bore the tandem type solar cells in 1979, and also new products of a-SiC:H and a-SiGe:H in the early period of 1980s are described. These innovative device structures and materials have bloomed in the middle of 1980s in R & D phase such as a-SiC/a-Si heterojunction solar cells, a-Si/a-SiGe and also a-Si/poly-Si tandem type solar cells, and industrialized in recent few years. New kind of trials on full-color thin film light emitting devices has also been recently initiated with wide range of band gap controllability of a-SiC:H.The third material is microcrystalline silicon (µc-Si) and their alloys which gathers a tremendous R & D effort as a promised candidate for the bottom cell of the a-Si/µc-Si tandem solar cells aimed for the all-round plasma CVD process for the next age thin film photovoltaic devices. In the final part of presentation, a brief discussion will be given on a technological evolution from “bulk crystalline age” to “multilayered thin film age” in the semiconductor optoelectronics toward 21 century.


2017 ◽  
Vol 3 (4) ◽  
pp. 1700007 ◽  
Author(s):  
Hang Yin ◽  
Sin Hang Cheung ◽  
Jenner H. L. Ngai ◽  
Carr Hoi Yi Ho ◽  
Ka Lok Chiu ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (58) ◽  
pp. 33710-33715
Author(s):  
Haoyu Xu ◽  
Dongqiang Chen ◽  
Litao Xin ◽  
Heju Xu ◽  
Wei Yu

A suitable annealing temperature was found by adopting the sol–gel method to prepare silicon-based molybdenum sulfide film heterojunction solar cells.


RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68663-68674 ◽  
Author(s):  
Halla Lahmar ◽  
Amor Azizi ◽  
Guy Schmerber ◽  
Aziz Dinia

Transparent conducting Cu2O/non-doped ZnO/Al-doped ZnO/FTO heterojunction solar cells were fabricated by a three-step electrodeposition; with non-doped ZnO film as a buffer layer between-AZO thin film and p-Cu2O nanostructure.


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