Thermal annealing study of radiation induced defects in nitride-based multi- junction solar cell structures using Deep Level Transient Spectroscopy

2010 ◽  
Author(s):  
A. Khan ◽  
D. A. Rahman ◽  
S. Alsharif ◽  
J. Gou ◽  
A. Gapud ◽  
...  
Keyword(s):  
Solar Cell ◽  
Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Junction Solar Cell ◽  
Cell Structures ◽  
Radiation Induced ◽  
Annealing Study ◽  
Transient Spectroscopy ◽  
Induced Defects

Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu

2007 ◽  
Vol 131-133 ◽  
pp. 363-368 ◽  
Author(s):  
Vladimir P. Markevich ◽  
Anthony R. Peaker ◽  
I.F. Medvedeva ◽  
Vasilii E. Gusakov ◽  
L.I. Murin ◽  
...  
Keyword(s):  
Energy Level ◽  
Deep Level ◽  
Stable Configuration ◽  
Annealing Behaviour ◽  
Chemical Modelling ◽  
Radiation Induced ◽  
Defect Reactions ◽  
Annealing Study ◽  
Transient Spectroscopy ◽  
Induced Defects

The influence of Cu contamination on radiation-induced defect reactions in n-type Czochralski-grown silicon (Cz-Si) crystals has been studied by means of the Hall effect technique, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS with supporting theoretical modeling of defects. It is found that the contamination of Cz-Si samples with Cu does not influence significantly the energy spectrum and introduction rates of the principal electrically active defects induced by electron irradiation. The vacancy-oxygen (VO) centre, divacancy (V2) and a complex consisting of a silicon self-interstitial with the oxygen dimer (IO2) are found to be the dominant radiation-induced defects in Cu-contaminated samples as well as in uncontaminated ones. An isochronal annealing study has shown that the presence of Cu affects the annealing behaviour of the vacancy-related defects. In Cu-doped samples the VO centre disappears upon annealing at significantly lower temperatures (175-250°C) compared to those of the VO disappearance in the uncontaminated samples (300-375°C). The disappearance of the VO centres in the Cu-doped samples occurs simultaneously with an anti-correlated introduction of a defect with an energy level at about Ec- 0.60 eV. It is suggested that this defect is formed by the interaction of a mobile Cu atom with the VO complex. According to results of quantum-chemical modelling, in the most stable configuration of the Cu-VO defect a Cu atom occupies a tetrahedral interstitial position nearest to the elongated Si-Si bond of the VO centre. The presence of the Cu atom is found to result in the further elongation of the Si-Si bond and a shift of the VO acceptor level to the middle of the gap. The annealing behaviour of V2 has also been found to be different in the irradiated Cu-doped samples compared to that in the uncontaminated ones. The most probable reason for this difference is an interaction of mobile Cu atoms with di-vacancies. An energy level at about Ec-0.17 eV has been tentatively assigned to a complex consisting of a Cu atom and a di-vacancy.

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 489-492 ◽  
Author(s):  
Atsuo Kawasuso ◽  
Michael Weidner ◽  
F. Redmann ◽  
Thomas Frank ◽  
Reinhard Krause-Rehberg ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

scholarly journals Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

2015 ◽  
Vol 66 (6) ◽  
pp. 323-328 ◽  
Author(s):  
Ladislav Harmatha ◽  
Miroslav Mikolášek ◽  
L’ubica Stuchlíková ◽  
Arpád Kósa ◽  
Milan Žiška ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Heavy Ions ◽  
Deep Level Transient Spectroscopy ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Different Types ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Abstract The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Proton Irradiation Damage in Zn and Cd Doped InP

1993 ◽  
Vol 325 ◽  
Author(s):  
George C. Rybicki ◽  
Wendell S. Williams
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Damage ◽  
Radiation Induced ◽  
Diffusion Rates ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Capture Cross Sections

AbstractDeep Level Transient Spectroscopy (DLTS) was used to study the defects introduced in Zn and Cd doped Schottky barrier diodes by 2 MeV proton irradiation. The defects H3, H4 and H5 were observed in lightly Zn doped InP, while only the defects H3 and H5 were observed in more heavily Zn doped and Cd doped InP. The defect activation energies and capture cross sections did not vary between the Zn and Cd doped InP.The concentration of the radiation induced defects was also measured. The introduction rate of the defect H4 in the lightly Zn doped InP and the introduction rate of the defect H3 in the heavily Zn and Cd doped InP were about equal, but the introduction rate of the defect H5 varied strongly among the three types of material. The introduction rate of H5 was highest in the heavily Zn doped InP but the lowest in the heavily Cd doped InP, even though they were doped comparably. As a result, the total defect introduction rate was lowest in the highly Cd doped InP.The results can be interpreted in terms of the models for the formation and annealing of defects, and by the different diffusion rates of Zn and Cd in InP.

Vacancy Clusters in Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 125-130 ◽  
Author(s):  
Anthony R. Peaker ◽  
Vladimir P. Markevich ◽  
J. Slotte ◽  
K. Kuitunen ◽  
F. Tuomisto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Measurements ◽  
Coulombic Repulsion ◽  
Radiation Induced ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Induced Defects

Fast neutron irradiation of germanium has been used to study vacancy reactions and vacancy clustering in germanium as a model system to understand ion implantation and the vacancy reactions which are responsible for the apparently low n-type doping ceiling in implanted germanium. It is found that at low neutron doses (~1011cm-2) the damage produced is very similar to that resulting from electron or gamma irradiation whereas at higher doses (> 1013cm-2) the damage is similar to that resulting from ion implantation as observed in the region near the peak of a doping implant. Electrical measurements including CV profiling, spreading resistance, Deep- Level Transient-Spectroscopy and high resolution Laplace Deep-Level Transient-Spectroscopy have been used in conjunction with positron annihilation and annealing studies. In germanium most radiation and implantation defects are acceptor like and in n-type material the vacancy is negatively charged. In consequence the coulombic repulsion between two vacancies and between vacancies and other radiation-induced defects mitigates against the formation of complexes so that simple defects such as the vacancy donor pair predominate. However in the case of ion implantation and neutron irradiation it is postulated that localized high concentrations of acceptor like defects produce regions of type inversion in which the vacancy is neutral and can combine with itself or with other radiation induced acceptor like defects. In this paper the progression from simple damage to complex damage with increasing neutron dose is examined.

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

The Ion Implanted Arsenic Tail in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
C. Clark
Keyword(s):  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Anodic Oxidation ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Activation ◽  
Spreading Resistance ◽  
Transient Spectroscopy ◽  
And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

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