Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC

1999 ◽  
Vol 33 (11) ◽  
pp. 1188-1192 ◽  
Author(s):  
V. S. Ballandovich
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Induced ◽  
Transient Spectroscopy

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 489-492 ◽  
Author(s):  
Atsuo Kawasuso ◽  
Michael Weidner ◽  
F. Redmann ◽  
Thomas Frank ◽  
Reinhard Krause-Rehberg ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy

2005 ◽  
Vol 892 ◽  
Author(s):  
Mo Ahoujja ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Peak Intensity ◽  
Spectral Peaks ◽  
Deep Donor ◽  
Radiation Induced ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractSi doped GaN grown by molecular beam epitaxy on sapphire substrates were characterized by capacitance transient spectroscopy. Conventional deep level transient spectroscopy (DLTS) measurements displayed six deep level defects, labeled A1, A, B, C1, C, and D, with activation energy ranging from 0.20 to 0.82 eV below the conduction band. Based on the logarithmic dependence of the DLTS spectral peaks on the filling pulse width, it is deduced that the defects A, B, C, and D are concentrated in the vicinity of line dislocations. Double-correlation DLTS (DDLTS) measurements, on the other hand, showed that only defects A (0.82 eV) and D (0.22 eV) exhibited deep donor-like characteristics. Following a 1.0 MeV electron irradiation of the GaN sample, one radiation-induced peak, E, with activation energy less than 0.20 eV was observed in the DLTS spectrum. However, after annealing at 350 °C, this DLTS peak intensity was found to diminish significantly.

Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies

2005 ◽  
Vol 108-109 ◽  
pp. 261-266 ◽  
Author(s):  
Lyudmila I. Khirunenko ◽  
Yu.V. Pomozov ◽  
N.A. Tripachko ◽  
Mikhail G. Sosnin ◽  
A.V. Duvanskii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Absorption Bands ◽  
Interstitial Carbon ◽  
Intermediate States ◽  
Lower Activation ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Interstitial Carbon Atom

The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm-1 as well as another set of the bands at 812, 967.4 and 1086 cm-1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

scholarly journals Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

2015 ◽  
Vol 66 (6) ◽  
pp. 323-328 ◽  
Author(s):  
Ladislav Harmatha ◽  
Miroslav Mikolášek ◽  
L’ubica Stuchlíková ◽  
Arpád Kósa ◽  
Milan Žiška ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Heavy Ions ◽  
Deep Level Transient Spectroscopy ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Different Types ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Abstract The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Proton Irradiation Damage in Zn and Cd Doped InP

1993 ◽  
Vol 325 ◽  
Author(s):  
George C. Rybicki ◽  
Wendell S. Williams
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Damage ◽  
Radiation Induced ◽  
Diffusion Rates ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Capture Cross Sections

AbstractDeep Level Transient Spectroscopy (DLTS) was used to study the defects introduced in Zn and Cd doped Schottky barrier diodes by 2 MeV proton irradiation. The defects H3, H4 and H5 were observed in lightly Zn doped InP, while only the defects H3 and H5 were observed in more heavily Zn doped and Cd doped InP. The defect activation energies and capture cross sections did not vary between the Zn and Cd doped InP.The concentration of the radiation induced defects was also measured. The introduction rate of the defect H4 in the lightly Zn doped InP and the introduction rate of the defect H3 in the heavily Zn and Cd doped InP were about equal, but the introduction rate of the defect H5 varied strongly among the three types of material. The introduction rate of H5 was highest in the heavily Zn doped InP but the lowest in the heavily Cd doped InP, even though they were doped comparably. As a result, the total defect introduction rate was lowest in the highly Cd doped InP.The results can be interpreted in terms of the models for the formation and annealing of defects, and by the different diffusion rates of Zn and Cd in InP.

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 369-372
Author(s):  
Ioana Pintilie ◽  
Lars S. Løvlie ◽  
K. Irmscher ◽  
Günter Wagner ◽  
Bengt Gunnar Svensson ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Nitrogen Doped ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Mev Protons ◽  
Thermal Stability Of

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons or 1.6 MeV protons. The influence of silane and propane flows used during the epilayers growth on the behaviour of radiation induced EH6,7 levels is studied. Samples grown under different conditions were investigated: 1 sample grown in steps of different C/Si ratio obtained by changing the propane flow only; 1 sample grown in steps of different C/Si ratio obtained by changing the silane flow only; 2 samples grown with a C/Si ratio of 1.5 but with different flows of propane and silane. These investigations revealed that the low thermal stability of EH6,7 (the defects anneal out at temperatures as low as 750K) is due to the magnitude of silane flow used during the growth irrespective of the C/Si ratio. A possible structure of the EH6,7 defect is discussed.

Vacancy Clusters in Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 125-130 ◽  
Author(s):  
Anthony R. Peaker ◽  
Vladimir P. Markevich ◽  
J. Slotte ◽  
K. Kuitunen ◽  
F. Tuomisto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Measurements ◽  
Coulombic Repulsion ◽  
Radiation Induced ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Induced Defects

Fast neutron irradiation of germanium has been used to study vacancy reactions and vacancy clustering in germanium as a model system to understand ion implantation and the vacancy reactions which are responsible for the apparently low n-type doping ceiling in implanted germanium. It is found that at low neutron doses (~1011cm-2) the damage produced is very similar to that resulting from electron or gamma irradiation whereas at higher doses (> 1013cm-2) the damage is similar to that resulting from ion implantation as observed in the region near the peak of a doping implant. Electrical measurements including CV profiling, spreading resistance, Deep- Level Transient-Spectroscopy and high resolution Laplace Deep-Level Transient-Spectroscopy have been used in conjunction with positron annihilation and annealing studies. In germanium most radiation and implantation defects are acceptor like and in n-type material the vacancy is negatively charged. In consequence the coulombic repulsion between two vacancies and between vacancies and other radiation-induced defects mitigates against the formation of complexes so that simple defects such as the vacancy donor pair predominate. However in the case of ion implantation and neutron irradiation it is postulated that localized high concentrations of acceptor like defects produce regions of type inversion in which the vacancy is neutral and can combine with itself or with other radiation induced acceptor like defects. In this paper the progression from simple damage to complex damage with increasing neutron dose is examined.

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