A flip-chip-packaged and fully integrated 60 GHz CMOS micro-radar sensor for heartbeat and mechanical vibration detections

2012 ◽  
Author(s):  
Te-Yu Jason Kao ◽  
Austin Ying-Kuang Chen ◽  
Yan Yan ◽  
Tze-Min Shen ◽  
Jenshan Lin
Keyword(s):  
Flip Chip ◽  
Mechanical Vibration ◽  
60 Ghz ◽  
Radar Sensor ◽  
Fully Integrated

A fully integrated 60-GHz radar sensor with partly integrated phase-locked loop

2011 ◽  
Author(s):  
Florian Starzer ◽  
Markus Ortner ◽  
Hans Peter Forstner ◽  
Reinhard Feger ◽  
Andreas Stelzer
Keyword(s):  
Phase Locked Loop ◽  
60 Ghz ◽  
Radar Sensor ◽  
Fully Integrated

Fully integrated low-power flip chip bonding of arrayed optoelectronic devices on SOS

2002 ◽  
Author(s):  
Ronald E. Reedy ◽  
Hal Anthony ◽  
Charles Kuznia ◽  
Mike Pendelton ◽  
Jim Cable ◽  
...  
Keyword(s):  
Low Power ◽  
Flip Chip ◽  
Optoelectronic Devices ◽  
Fully Integrated ◽  
Flip Chip Bonding

Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission

2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  
Keyword(s):  
Data Transmission ◽  
Intermediate Frequency ◽  
Phase Locked Loop ◽  
Data Rate ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Integrated ◽  
Front End ◽  
Free Data ◽  
Bicmos Technology

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.

A fully integrated flip-chip SiGe BiCMOS power amplifier for 802.11ac applications

2016 ◽  
Author(s):  
Apostolos Samelis ◽  
Edward Whittaker ◽  
Michael Ball ◽  
Alasdair Bruce ◽  
John Nisbet ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Flip Chip ◽  
Fully Integrated ◽  
Sige Bicmos

A 10 MHz to 80 GHz BGA Transition from Chip to LTCC Interposer for Chip Scale Packages

2015 ◽  
Vol 2015 (CICMT) ◽  
pp. 000067-000072
Author(s):  
Bradley A. Thrasher ◽  
William E. McKinzie ◽  
Deepukumar M. Nair ◽  
Michael A. Smith ◽  
Allan Beikmohamadi ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Flip Chip ◽  
Ball Grid Array ◽  
Electrical Performance ◽  
60 Ghz ◽  
Test Chip ◽  
Full Wave ◽  
Test Board ◽  
Measurement Results ◽  
Solder Balls

Presented here are the design, fabrication, and measurement results of a low temperature cofired ceramic (LTCC) chip-to-interposer transition utilizing a flip-chip ball grid array (BGA) interconnect that provides excellent electrical performance up to and including 80 GHz. A test board fabricated in LTCC is used as the interposer substrate and another smaller LTCC part is used as a surrogate chip for demonstration purposes. The BGA chip-to-interposer transition is designed as a back-to-back pair of transitions with an assembly consisting of an LTCC interposer, an LTCC test chip, and a BGA interconnect constructed with 260 μm diameter polymer core solder balls. The LTCC material employed is DuPont™ GreenTape™ 9K7. Full-wave simulation results predict excellent electrical performance from 10 MHz to 80 GHz, with the chip-to-interposer BGA transition having less than 0.5 dB insertion loss at 60 GHz and less than 1 dB insertion loss up to 80 GHz. In an assembled package (back-to-back BGA transitions), the insertion loss was measured to be 1 dB per transition at 60 GHz and less than 2 dB per transition for all frequencies up to 80 GHz.

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