The 1-V 24-GHz low-voltage low-power current- mode transmitter in 130-nm CMOS technology

2007 ◽  
Author(s):  
Wen-Chieh Wang ◽  
Chung-Yu Wu
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
24 Ghz

scholarly journals A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1004
Author(s):  
Massimo Vatalaro ◽  
Marco Lanuzza ◽  
Felice Crupi ◽  
Tatiana Moposita ◽  
Lionel Trojman ◽  
...  
Keyword(s):  
Low Power ◽  
Modular Design ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Chip Area ◽  
Analog Implementation ◽  
Efficient Option ◽  
P Type

This paper presents a novel low-power low-voltage analog implementation of the softmax function, with electrically adjustable amplitude and slope parameters. We propose a modular design, which can be scaled by the number of inputs (and of corresponding outputs). It is composed of input current–voltage linear converter stages (1st stages), MOSFETs operating in a subthreshold regime implementing the exponential functions (2nd stages), and analog divider stages (3rd stages). Each stage is only composed of p-type MOSFET transistors. Designed in a 0.18 µm CMOS technology (TSMC), the proposed softmax circuit can be operated at a supply voltage of 500 mV. A ten-input/ten-output realization occupies a chip area of 2570 µm2 and consumes only 3 µW of power, representing a very compact and energy-efficient option compared to the corresponding digital implementations.

An Ultra-Low-Voltage Low-Power Current-Mode True RMS-to-DC Converter

2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
High Performance ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Cmos Technology ◽  
Low Supply Voltage

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.

AN ULTRA LOW-POWER CURRENT-MODE SENSE AMPLIFIER FOR SRAM APPLICATIONS

2005 ◽  
Vol 14 (05) ◽  
pp. 939-951 ◽  
Author(s):  
ZHI-HUI KONG ◽  
KIAT-SENG YEO ◽  
CHIP-HONG CHANG
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Ultra Low Power ◽  
Power Efficient ◽  
Power Characteristics ◽  
Sense Amplifier ◽  
Micro Power ◽  
Power Delay Product

A novel micro-power current sense amplifier employing a cross-coupled current-mirror configuration is presented. The circuit is designed for low-voltage low-power SRAM applications. Its sensing speed is independent of the bit-line capacitances and is almost insensitive to the data-line capacitances. Extensive post-layout simulation results based on a 1.8 V/0.18 μm CMOS technology from Chartered Semiconductor Manufacturing Ltd. (CHRT) have verified that the new sense amplifier promises a much sought-after power-efficient advantage and a note-worthy power-delay product superiority over the conventional and recently reported sense amplifier circuits. These attributes of the proposed sense amplifier make it judiciously appropriate for use in the contemporary high-complexity regime, which incessantly craves for low-power characteristics.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

A study of a low-voltage, low-power, current-mode ? ? modulator circuit

1998 ◽  
Vol 124 (1) ◽  
pp. 24-32
Author(s):  
Yasuhiro Sugimoto ◽  
Kenichiro Oohara ◽  
Tetsuya Iida
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Current Mode
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