Analysis of high current effects on the performance of pnp InP-based heterojunction bipolar transistors

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850250 ◽

2002 ◽

Author(s):

S. Datta ◽

K.P. Roenker ◽

R.E. Peddenpohl ◽

M.M. Cahay

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

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A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_46 ◽

1992 ◽

pp. 322-325

Author(s):

K. Sasaki ◽

T. Miyajima ◽

S. Furukawa

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

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Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors

Proceedings IEEE Southeastcon '98 'Engineering for a New Era' ◽

10.1109/secon.1998.673317 ◽

2002 ◽

Author(s):

Jiling Song ◽

J.S. Yuan

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

Barrier Effects ◽

Current Densities

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Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843932 ◽

2002 ◽

Author(s):

S. Voldman ◽

P. Juliano ◽

R. Johnson ◽

N. Schmidt ◽

A. Joseph ◽

...

Keyword(s):

Current Pulse ◽

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistors ◽

High Current ◽

Pulse Characterization

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High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.10.231 ◽

2007 ◽

Vol 298 ◽

pp. 852-856 ◽

Author(s):

T. Chung ◽

D.M. Keogh ◽

J.-H. Ryou ◽

D. Yoo ◽

J. Limb ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Metalorganic Chemical

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High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.215087 ◽

1993 ◽

Vol 14 (1) ◽

pp. 19-21 ◽

Author(s):

L.M. Lunardi ◽

S. Chandrasekhar ◽

R.A. Hamm

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

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High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Heavily Doped Base

10.7567/ssdm.1984.c-4-3 ◽

1984 ◽

Author(s):

Hiroshi ITO ◽

Tadao ISHIBASHI ◽

Takayuki SUGETA

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

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Analysis of the short-term DC-current gain variation during high current density-low temperature stress of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.822267 ◽

2000 ◽

Vol 47 (2) ◽

pp. 274-281 ◽

Author(s):

N. Bovolon ◽

R. Schultheis ◽

J.-E. Muller ◽

P. Zwicknagl

Keyword(s):

Low Temperature ◽

Current Density ◽

Heterojunction Bipolar Transistors ◽

High Current Density ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Gain Variation ◽

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High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80145-3 ◽

1995 ◽

Vol 150 ◽

pp. 1281-1286 ◽

Author(s):

H. Ando ◽

N. Okamoto ◽

S. Yamaura ◽

T. Tomioka ◽

T. Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Molecular Beam Epitaxy System ◽

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Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. I. Transport and high current gain

IEEE Transactions on Electron Devices ◽

10.1109/16.24342 ◽

1989 ◽

Vol 36 (6) ◽

pp. 1015-1019 ◽

Author(s):

D.J. Day ◽

S.C. Jue ◽

A. Margittai ◽

P.A. Houston

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

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Metamorphic InP/InGaAs heterojunction bipolar transistors under high-current and high temperature stress

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014429 ◽

2003 ◽

Author(s):

Hong Yang ◽

Hong Wang ◽

K. Radhakrishnan

Keyword(s):

High Temperature ◽

Temperature Stress ◽

Heterojunction Bipolar Transistors ◽

High Temperature Stress ◽

Bipolar Transistors ◽

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