Temperature Controllable QCM Sensor with Accurate Temperature Measurement for Outgas and Contamination Assessment

Author(s):  
Yuta Tsuchiya ◽  
Hiroyuki Kukita ◽  
Tsuyoshi Shiobara ◽  
Kazuki Yukumatsu ◽  
Eiji Miyazaki
2008 ◽  
Vol 573-574 ◽  
pp. 35-43 ◽  
Author(s):  
Nicolaas Stolwijk ◽  
Ludmila Lerner ◽  
Axel Giese ◽  
Wilfried Lerch

The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si.


2020 ◽  
Vol 59 (14) ◽  
pp. 4461
Author(s):  
Jiao Xu ◽  
Junming Chen ◽  
Dongping Zhang ◽  
Yonglu Wang ◽  
Yibin Zhang ◽  
...  

1997 ◽  
Vol 470 ◽  
Author(s):  
D. L. Marcy ◽  
S. Chial ◽  
M. Beneš ◽  
J. C. Sturm

ABSTRACTPyrometry of silicon wafers under 700°C at wavelengths over 1μm is difficult because lightly doped wafers become partially transparent. In this work, a modified commercial RTCVD reactor with 8” wafer capability was used to study the temperature measurement of Si wafers over the range of 400–700°C using top and bottom pyrometric detectors. We present initial results on measurements of both reflection and transmission in-silu to determine emissivity at 3.3μm. For heavily doped wafers emissivity was independent of temperature and the measured temperature by pyrometry agreed well with that measured by thermocouple for 400–700°C. For lightly doped wafers, emissivity was temperature dependent due to the increased transparency of the wafer at low temperatures. Using fixed emissivity, the measured temperature severely underestimates the actual temperature below 550°C. By calculating emissivity from the measured reflection and transmission, accurate temperature measurement was achieved from 400–700°C without any a priori knowledge of the wafer.


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