Direct Deposition of Thin-Film Strain Gauges with a New Coating System for Elevated Temperatures

2020 ◽  
Author(s):  
Rico Ottermann ◽  
Daniel Klaas ◽  
Folke Dencker ◽  
Marc Christopher Wurz ◽  
Dominik Hoheisel ◽  
...  
Keyword(s):  
Thin Film ◽  
Elevated Temperatures ◽  
Strain Gauges ◽  
Coating System ◽  
Direct Deposition

scholarly journals Investigation on Sensing and Stability of Nitrogen-doped ITO Thin-film Strain Gauges at High Temperatures

2021 ◽  
Author(s):  
Zhichun Liu ◽  
Junsheng Liang ◽  
Jian Li ◽  
Hao Zhou ◽  
Mingjie Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Elemental Composition ◽  
High Temperatures ◽  
Indium Tin Oxide ◽  
Elevated Temperatures ◽  
Thermal Strain ◽  
Strain Gauges ◽  
Band Structures ◽  
X Ray ◽  
Nitrogen Doped

Abstract Nitrogen-doped indium tin oxide (ITO) has been applied in the thin-film strain gauges (TFSGs) due to their high stability, excellent piezoresistivity and antioxidation at elevated temperatures. However, the mechanism on the sensing and stability of the nitrogen-doped ITO TFSGs at high temperatures was not comprehensively clarified. In this work, various ITO TFSGs were fabricated by RF magnetron sputtering with different nitrogen partial pressures (NPPs) of 5%~40%. The elemental composition and band structures of the ITO TFSGs were examined by the energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS), respectively. Results show that the Fermi energy level shifts closer to the valence band maximum energy (Ev) gradually with the growth of NPPs, causing a reduction in the number of electrons ionized to the conduction band. The smallest content change rates of nitrogen (3.8%) and oxygen (1.6%) after subjecting to the thermal strain test were observed in the 20%N2 ITO TFSG. In consequence, the 20%N2 ITO TFSG exhibits the lowest resistance drift rate (DR) at high temperatures due to its stable elemental composition. Moreover, we found that the band structures and elemental composition of the ITO TFSGs are the main factors affecting their piezoresistive response at different temperatures. The band structures play a major role in the gauge factors (GFs) of the ITO TFSGs at room temperature and 600 ℃. The element variation takes responsibility for the different GFs of the ITO TFSGs at 800℃, 900℃ and 1000℃. In addition, the piezoresistive stability is also dependent on the elemental composition affected by the dynamic equilibrium between the diffusion amount of oxygen and the escape number of the nitrogen in the ITO thin films at high temperatures.

scholarly journals Development, Characterisation and High-Temperature Suitability of Thin-Film Strain Gauges Directly Deposited with a New Sputter Coating System

Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3294
Author(s):  
Daniel Klaas ◽  
Rico Ottermann ◽  
Folke Dencker ◽  
Marc Christopher Wurz
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Protective Layer ◽  
Strain Gauges ◽  
Gauge Factor ◽  
Coating System ◽  
Component Size ◽  
Commercial Strain ◽  
Operation Temperature ◽  
Sputter Coating

New sensor and sensor manufacturing technologies are identified as a key factor for a successful digitalisation and are therefore economically important for manufacturers and industry. To address various requirements, a new sputter coating system has been invented at the Institute of Micro Production Technology. It enables the deposition of sensor systems directly onto technical surfaces. Compared to commercially available systems, it has no spatial limitations concerning the maximum coatable component size. Moreover, it enables a simultaneous structuring of deposited layers. Within this paper, characterisation techniques, results and challenges concerning directly deposited thin film strain gauges with the new sputter coating system are presented. Constantan (CuNiMn 54/45/1) and NiCr 80/20 are used as sensor materials. The initial resistance, temperature coefficient of resistance and gauge factor/k-factor of quarter-bridge strain gauges are characterised. The influence of a protective layer on sensor behaviour and layer adhesion is investigated as well. Moreover, the temperature compensation quality of directly deposited half-bridge strain gauges is evaluated, optimised with an external trimming technology and benchmarked against commercial strain gauges. Finally, the suitability for high-temperature strain measurement is investigated. Results show a maximum operation temperature of at least 400 °C, which is above the current state-of-the-art of commercial foil-based metal strain gauges.

Thin Film Encapsulation of Organic Solar Cells by Direct Deposition of Polysilazanes from Solution

2019 ◽  
pp. 1900598 ◽  
Author(s):  
Iftikhar Ahmed Channa ◽  
Andreas Distler ◽  
Michael Zaiser ◽  
Christoph J. Brabec ◽  
Hans‐Joachim Egelhaaf
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Direct Deposition ◽  
Thin Film Encapsulation

Transient Temperature During the Vaporization of Liquid on a Pulsed Laser-Heated Solid Surface

1996 ◽  
Vol 118 (3) ◽  
pp. 702-708 ◽  
Author(s):  
H. K. Park ◽  
X. Zhang ◽  
C. P. Grigoropoulos ◽  
C. C. Poon ◽  
A. C. Tam
Keyword(s):  
Thin Film ◽  
Solid Surface ◽  
Elevated Temperatures ◽  
Bubble Nucleation ◽  
Transient Temperature ◽  
Specular Reflectance ◽  
Transient Temperature Field ◽  
Excimer Laser Pulse ◽  
Nanosecond Time Resolution ◽  
Laser Heated

The thermodynamics of the rapid vaporization of a liquid on a solid surface heated by an excimer laser pulse is studied experimentally. The transient temperature field is measured by monitoring the photothermal reflectance of an embedded thin film in nanosecond time resolution. The transient reflectivity is calibrated by considering a temperature gradient across the sample based on the static measurements of the thin film optical properties at elevated temperatures. The dynamics of bubble nucleation, growth, and collapse is detected by probing the optical specular reflectance. The metastability behavior of the liquid and the criterion for the onset of liquid–vapor phase transition in nanosecond time scale are obtained quantitatively for the first time.

Thin film strain gauges on polymers: main characteristics

1995 ◽  
Vol 46 (1-3) ◽  
pp. 213-217 ◽  
Author(s):  
H. Grange ◽  
C. Maeder ◽  
C. Bieth ◽  
S. Renard ◽  
G. Delapierre
Keyword(s):  
Thin Film ◽  
Strain Gauges

Mechanisms for Defect Creation and Removal in Hydrogenated and Deuterated Amorphous Silicon Studied using Thin Film Transistors

2006 ◽  
Vol 910 ◽  
Author(s):  
Andew Flewitt ◽  
Shufan Lin ◽  
William I Milne ◽  
Ralf B Wehrspohn ◽  
Martin J Powell
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Elevated Temperatures ◽  
Chemical Vapour ◽  
Rf Plasma ◽  
Gate Bias ◽  
Removal Process ◽  
Defect Creation

AbstractIt has been widely observed that thin film transistors (TFTs) incorporating an hydrogenated amorphous silicon (a-Si:H) channel exhibit a progressive shift in their threshold voltage with time upon application of a gate bias. This is attributed to the creation of metastable defects in the a-Si:H which can be removed by annealing the device at elevated temperatures with no bias applied to the gate, causing the threshold voltage to return to its original value. In this work, the defect creation and removal process has been investigated using both fully hydrogenated and fully deuterated amorphous silicon (a-Si:D) TFTs. In both cases, material was deposited by rf plasma enhanced chemical vapour deposition over a range of gas pressures to cover the a-g transition. The variation in threshold voltage as a function of gate bias stressing time, and annealing time with no gate bias, was measured. Using the thermalisation energy concept, it has been possible to quantitatively determine the distribution of energies required for defect creation and removal as well as the associated attempt-to-escape frequencies. The defect creation and removal process in a-Si:H is then discussed in the light of these results.

The use of an LMIS and argon ion sputtering in studies of thin film strain gauges

Vacuum ◽  
1984 ◽  
Vol 34 (1-2) ◽  
pp. 321-325 ◽  
Author(s):  
AG Taylor ◽  
RE Thurstans ◽  
DP Oxley
Keyword(s):  
Thin Film ◽  
Strain Gauges ◽  
Ion Sputtering ◽  
Argon Ion

Patchable thin-film strain gauges based on pentacene transistors

2015 ◽  
Vol 26 ◽  
pp. 355-358 ◽  
Author(s):  
Ju-Hyung Kim ◽  
Yuchen Liang ◽  
Soonmin Seo
Keyword(s):  
Thin Film ◽  
Strain Gauges

scholarly journals Novel Polymeric Thin-Film Composite Membranes for High-Temperature Gas Separations

Membranes ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 51 ◽  
Author(s):  
Weigelt ◽  
Escorihuela ◽  
Descalzo ◽  
Tena ◽  
Escolástico ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Elevated Temperatures ◽  
Composite Membranes ◽  
Membrane Reactors ◽  
Porous Support ◽  
Film Composite ◽  
Thin Film Composite ◽  
Polymeric Thin Film ◽  
Shift Reaction

Novel selective polymeric thin-film composite membranes (TFCMs) for applications at elevated temperatures were developed. Thin selective layers of the polyimides Matrimid 5218® and 6FDA-6FpDA were cast on a developed polybenzimidazole (PBI) porous support prepared by a phase inversion process. The TFCM properties were investigated with different gases in a wide temperature range, including temperatures up to 270 °C. The membranes showed very high thermal stability and performed well at the elevated temperatures. The development of highly thermally resistant polymeric membranes such as these TFCMs opens opportunities for application in high-temperature integrated processes, such as catalytic membrane reactors for the water-gas shift reaction in order to maximize H2 yield.

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