Effect of Argon Flow to the Growth of Aluminum Nitride Thin Films using RF Magnetron Sputtering

2019 ◽  
Author(s):  
Muliana Tahan ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Anis Suhaili Bakri ◽  
Amaliyana Raship ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Argon Flow

scholarly journals Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
J. Chan ◽  
T. Fu ◽  
N. W. Cheung ◽  
J. Ross ◽  
N. Newman ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Plasma ◽  
Absorption Characteristics

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

Pressure Dependence of AZO Film Deposited by RF Powered Magnetron Sputtering System

2015 ◽  
Vol 1119 ◽  
pp. 29-33
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie Mani ◽  
Lam Mui Li ◽  
Umar Faruk Shuib ◽  
Saafie Salleh ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Working Pressure ◽  
High Transparency ◽  
Transparent Films ◽  
Argon Flow ◽  
Sputtering System

This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performed with RF power of 100 Watt and the deposition times were fixed at 40 minutes. The argon pressures were varied from 10 sccm to 30 sccm in order to achieve different working pressure during deposition in order to study the effect of pressure towards characteristic of films. AZO thin films on different argon pressure were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency above 80 percent were achieved. The film deposited at 10 sccm argon flow exhibit the highest growth rate at 7.9 nm/m, highest intensity XRD peak with higher crystalline quality and lowest resistivity that is 2.7 x 10ˉ2Ω cm .

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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