Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

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Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

10.20944/preprints202107.0325.v1 ◽

2021 ◽

Author(s):

B. Riah ◽

Julien Camus ◽

Abdelhak Ayad ◽

Mohammad Rammal ◽

Raouia Zernadji ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Aluminum Nitride ◽

Magnetron Sputtering ◽

Epitaxial Growth ◽

Buffer Layer ◽

Molecular Beam ◽

Dc Magnetron Sputtering ◽

Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

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Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.833.127 ◽

2015 ◽

Vol 833 ◽

pp. 127-133

Author(s):

Jie Yu ◽

Jie Xing ◽

Xiu Hua Chen ◽

Wen Hui Ma ◽

Rui Li ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Radio Frequency ◽

Film Growth ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Electrolyte Film ◽

Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

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Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

MRS Proceedings ◽

10.1557/proc-572-389 ◽

1999 ◽

Vol 572 ◽

Author(s):

C. M. Lueng ◽

H. L. W. Chan ◽

W. K. Fong ◽

C. Surya ◽

C. L. Choy

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

High Temperature ◽

Molecular Beam Epitaxy ◽

Aluminum Nitride ◽

Composite Film ◽

High Frequency ◽

Molecular Beam ◽

Silicon Substrates ◽

Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

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