Study of off-stoichiometric aluminum nitride thin films: a simple method of fabricating distributed Bragg reflector for ultraviolet A by RF magnetron sputtering (Conference Presentation)

2018 ◽  
Author(s):  
Faiza Anjum ◽  
David M. Fryauf ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Bragg Reflector ◽  
Ultraviolet A ◽  
Distributed Bragg Reflector ◽  
Simple Method

Effect of Argon Flow to the Growth of Aluminum Nitride Thin Films using RF Magnetron Sputtering

2019 ◽  
Author(s):  
Muliana Tahan ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Anis Suhaili Bakri ◽  
Amaliyana Raship ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Argon Flow

The Influences of Annealing Temperatures on the Properties of HfO2 Thin Film and the Fabrication of SiO2/HfO2 Distributed Bragg Reflector

2015 ◽  
Vol 1101 ◽  
pp. 238-241
Author(s):  
Wen Cheng Tzou ◽  
Hon Kuan ◽  
Kai Yang Chuang
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Si Substrates ◽  
Grain Sizes ◽  
Thermal Annealing Process ◽  
Xrd Patterns ◽  
Surface Morphologies

In this study, HfO2 thin films were deposited onto the Si substrates by RF magnetron sputtering system. After deposition, the HfO2 thin films were then heated by a furnace thermal annealing process in air and at 400-700oC. The surface morphologies and crystalline characteristics of the HfO2 thin films were investigated by using SEM and XRD patterns. The grain sizes and crystalline phases increased with rising annealing temperature. In addition, the SiO2/HfO2 distributed bragg reflector (DBR) was used for improving the external quantum efficiency of the GaN-based LEDs. The output power of LEDs with 9-pair SiO2/HfO2 DBR and with Ag mirror+6-pair SiO2/HfO2 DBR were increased by approximately 10.6% and 7%, respectively, as compared with the LEDs without SiO2/HfO2 DBR.

scholarly journals Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
J. Chan ◽  
T. Fu ◽  
N. W. Cheung ◽  
J. Ross ◽  
N. Newman ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Plasma ◽  
Absorption Characteristics

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Characteristics of Ion Beam Assisted ITO Thin Films Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 601 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Kyong Chan Heo ◽  
Phil Kook Son ◽  
Youngku Sohn ◽  
Jonghoon Yi ◽  
Jin Hyuk Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Ito Thin Films
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