Impact of high frequency correlated noise on SiGe HBT low noise amplifier design

2012 ◽  
Author(s):  
Pei Shen ◽  
Guofu Niu ◽  
Ziyan Xu ◽  
Wanrong Zhang
Keyword(s):  
High Frequency ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Correlated Noise ◽  
Sige Hbt ◽  
Amplifier Design ◽  
Noise Amplifier

Advantages of utilizing through-silicon-vias in SiGe HBT RF low-noise amplifier design

2015 ◽  
Vol 57 (11) ◽  
pp. 2703-2706 ◽  
Author(s):  
Ickhyun Song ◽  
Moon-Kyu Cho ◽  
Seungwoo Jung ◽  
Inchan Ju ◽  
John D. Cressler
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Through Silicon Vias ◽  
Sige Hbt ◽  
Amplifier Design ◽  
Noise Amplifier ◽  
Silicon Vias

Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band

2018 ◽  
Vol 103 (3) ◽  
pp. 2679-2692
Author(s):  
Farhad Bahadori-Jahromi ◽  
Seyyed Jafar Zareian-Jahromi
Keyword(s):  
High Frequency ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ism Band ◽  
Amplifier Design ◽  
Noise Amplifier

scholarly journals A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Common Gate ◽  
Chip Size ◽  
Overall Performance ◽  
Amplifier Design ◽  
Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

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