Effective work-function tuning of TiN/HfO2/SiO2 gate-stack; a density functional tight binding study

2019 ◽  
Author(s):  
Hesameddin Ilatikhameneh ◽  
Hong-Hyun Park ◽  
Zhengping Jiang ◽  
Woosung Choi ◽  
Mohammad Ali Pourghaderi ◽  
...  
Keyword(s):  
Work Function ◽  
Density Functional ◽  
Tight Binding ◽  
Binding Study ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Work Function Tuning

Investigating doping effects on high-κ metal gate stack for effective work function engineering

2013 ◽  
Vol 88 ◽  
pp. 21-26 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Der Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Doping Effects

Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack

2006 ◽  
Vol 88 (7) ◽  
pp. 072907 ◽  
Author(s):  
Y. Liang ◽  
J. Curless ◽  
C. J. Tracy ◽  
D. C. Gilmer ◽  
J. K. Schaeffer ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Interface Dipole

Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 143-150 ◽  
Author(s):  
Naomi Yoshida ◽  
Xianmin Tang ◽  
Khaled Ahmed ◽  
Giuseppina Conti ◽  
Dave Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Gate Dielectric ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
Work Function Tuning ◽  
High K Gate Dielectric

Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process

2004 ◽  
Author(s):  
Moon Sig Joo ◽  
Byung Jin Cho ◽  
D. Z. Chi ◽  
N. Balasubramanian ◽  
D.-L. Kwong
Keyword(s):  
High Temperature ◽  
Work Function ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
High Temperature Process ◽  
High K

An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

2014 ◽  
Vol 35 (9) ◽  
pp. 096001 ◽  
Author(s):  
Xueli Ma ◽  
Hong Yang ◽  
Wenwu Wang ◽  
Huaxiang Yin ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Double Layer ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Tuning Method ◽  
High K ◽  
Work Function Tuning

Work function change of Ni, HfO2 films and Ni/HfO2 interfaces as a function of external electric field

2015 ◽  
Vol 29 (23) ◽  
pp. 1550168 ◽  
Author(s):  
Kehua Zhong ◽  
Guigui Xu ◽  
Jianmin Zhang ◽  
Renyuan Liao ◽  
Zhigao Huang
Keyword(s):  
Electric Field ◽  
Work Function ◽  
External Electric Field ◽  
Density Functional ◽  
Functional Theory ◽  
Effective Work ◽  
Effective Work Function ◽  
Function Change ◽  
Variation Versus ◽  
Work Functions

In this paper, the effects of external electric field on the work functions for Ni(001), Ni(111), HfO2(001) and HfO2(111) films and the effective work functions for Ni(001)/HfO2(001) and Ni(111)/HfO2(111) interfaces were studied by first-principles methods based on density functional theory (DFT). It is found that the work functions for all the systems change linearly with the strength of external electric field. Comparing the slopes of the work function variation versus external electric field strength for Ni, HfO2 films and Ni/HfO2 interfaces, we have found that the response of the effective work function to external electric field for Ni/HfO2 interfaces is determined by the response of the HfO2 side to external electric field.

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