Characteristics and sensitivity of p-type junctionless gate-all-around nanowire transistor
2013 ◽
Vol 34
(2)
◽
pp. 157-159
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2020 ◽
Vol 59
(7)
◽
pp. 070908
◽
2011 ◽
Vol 8
(9)
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pp. 872-877
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Keyword(s):
Keyword(s):
1992 ◽
Vol 50
(2)
◽
pp. 1396-1397
Keyword(s):
2019 ◽
Vol 47
(5)
◽
pp. 1247-1257
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Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1228-1231