scholarly journals Fabrication of p-Type Double Gate and Single Gate Junctionless Silicon Nanowire Transistor by Atomic Force Microscopy Nanolithography

Nano Hybrids ◽  
2013 ◽  
Vol 3 ◽  
pp. 93-113 ◽  
Author(s):  
Arash Dehzangi ◽  
Farhad Larki ◽  
Jumiah Hassan ◽  
Sabar D. Hutagalung ◽  
Elias B. Saion ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Gate Voltage ◽  
Potassium Hydroxide ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Double Gate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nanowire Transistor ◽  
P Type

In this work, we have investigated the fabrication of Double gate and Single gate Junctionless silicon nanowire transistor using silicon nanowire patterned on lightly doped (105 cm-3) p-type Silicon on insulator wafer fabricated by Atomic force microscopy nanolithography technique. Local anodic oxidation followed by two wet etching steps, Potassium hydroxide etching for Silicon removal and Hydrofluoric acid etching for oxide removal, were implemented to reach the structures. Writing speed and applied tip voltage were held in 0.6 µm/s and 8 volt respectively for Cr/Pt tip. Scan speed was held in 1.0 µm/s. The etching processes were elaborately performed and optimized by 30%wt. Potassium hydroxide + 10%vol. Isopropyl alcohol in appropriate time, temperature and humidity. The structure is a gated resistor turned off based on a pinch-off effect principle, when essential positive gate voltage is applied. Negative gate voltage was unable to make significant effect on drain current to drive the device into accumulation mode.

scholarly journals Pinch-Off Effect in P-Type Double Gate and Single Gate Junctionless Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Nanolithography

Nano Hybrids ◽  
2013 ◽  
Vol 4 ◽  
pp. 33-45 ◽  
Author(s):  
Farhad Larki ◽  
Arash Dehzangi ◽  
Jumiah Hassan ◽  
Alam Abedini ◽  
E.B. Saion ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Double Gate ◽  
Promising Alternative ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junctionless Transistors ◽  
Lateral Gate ◽  
P Type

The spark of aggressive scaling of transistors was started after the Moors law on prediction of device dimensions. Recently, among the several types of transistors, junctionless transistors were considered as one of the promising alternative for new generation of nanotransistors. In this work, we investigate the pinch-offeffect in double gate and single gate junctionless lateral gate transistors. The transistors are fabricated on lightly doped (1015) p-type Silicon-on-insulator wafer by using an atomic force microscopy nanolithography technique. The transistors are normallyonstate devices and working in depletion mode. The behavior of the devices confirms the normal behavior of the junctionless transistors. The pinch-offeffect appears at VG+2.0 V and VG+2.5 V for fabricated double gate and single structure, respectively.Onstate current is in the order of 10-9(A) for both structures due to low doping concentration. The single gate and double gate devices exhibit anIon/Ioffof approximately 105and 106, respectively.

Fabrication of SiNWs-FET Nanostructure Via Atomic Force Microscopy Lithography

2020 ◽  
Vol 301 ◽  
pp. 103-110
Author(s):  
Nurain Najihah Alias ◽  
Khatijah Aisha Yaacob ◽  
Kuan Yew Cheong
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Silicon Nanowires ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor ◽  
P Type

The unique electrical properties of silicon nanowires (SiNWs) is one of the reasons it become an attractive transducer for biosensor nowadays. Positive (holes) and negative (electron) charge carriers from SiNWs can simply interact with either positive or negative charge of sensing target. In this paper, we have studied the fabrication of silicon nanowires field effect transistor (SiNWs-FET) nanostructure patterned on 15 Ω resistivity of p-type silicon on insulator (SOI) wafer fabricated via atomic force microscopy lithography technique. To fabricate SiNWs-FET nanostructure, a conductive AFM tip, Cr/Pt cantilever tip, was used then various value of applied voltage, writing speed and relative humidity were studied. Subsequent, followed by wet etching processes, admixture of tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) were used to remove the undesired of silicon layer and diluted hydrofluoric acid (HF) was used to remove the oxide layer. From the results, it shows that, cantilever tip at 9 V with 0.4 μm/s writing speed and relative humidity between 55% - 60% gives the best formation of silicon oxide to fabricate SiNWs-FET nanostructure.

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

Atomic force microscopy and dark-toxicity pattern of unsymmetrical metallated porphyrins M(II)P-type as theranostics agents

2019 ◽  
Vol 245 ◽  
pp. 85-94 ◽  
Author(s):  
Radu Socoteanu ◽  
Mihai Anastasescu ◽  
Rica Boscencu ◽  
Carolina Constantin ◽  
Monica Neagu
Keyword(s):  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Toxicity Pattern

scholarly journals High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

2015 ◽  
Vol 86 (2) ◽  
pp. 023705 ◽  
Author(s):  
Mohammad Maroufi ◽  
Anthony G. Fowler ◽  
Ali Bazaei ◽  
S. O. Reza Moheimani
Keyword(s):  
Atomic Force Microscopy ◽  
Control Design ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Raster Scan

SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS

2010 ◽  
Vol 09 (04) ◽  
pp. 289-293 ◽  
Author(s):  
K. C. LEW ◽  
SABAR D. HUTAGALUNG
Keyword(s):  
Chemical Etching ◽  
Oxidation Process ◽  
Silicon Nanowire ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Atomic Force ◽  
Nanowire Transistor ◽  
Local Anodic Oxidation ◽  
Wet Chemical ◽  
Anodic Oxidation Process

Atomic force microscope (AFM) nanolithography was performed to create nanowire transistor pattern via local anodic oxidation process on surface of silicon-on-insulator (SOI) wafer. This nanoscale oxide pattern is used as a mask system for chemical etching to produce silicon nanowire transistor. The device with component structures of a silicon nanowire (SiNW) as channel with source, drain, and gate pads had been drawn at 9 V tip voltage, 6 μm/s writing speed with humidity 55.8–68.9%RH. The designed device was etched with tetramethylammonium hydroxide (TMAH) to remove uncovered silicon layer but oxide pattern remains. In order to obtain SiNW transistor, sample was etched using hydrogen fluoride (HF) to remove oxide layer. From the AFM and field emission scanning electron microscope (FESEM) observation found that the SiNW transistor with wire size of 92.65 nm in wire thickness, 90.83 nm wire width and 10.30 μm in length with contact pads size of about 5 μ m × 5 μ m has been successfully fabricated.

Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy

2012 ◽  
Vol 1426 ◽  
pp. 347-352
Author(s):  
Daisuke Hamashita ◽  
Yasuyoshi Kurokawa ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Atomic Force Microscopy ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Cubic Silicon Carbide

ABSTRACTP-type hydrogenated nanocrystalline cubic silicon carbide is a promising material for the emitter of n-type crystalline silicon heterojunction solar cell due to its lower light absorption and wider bandgap of 2.2 eV. The electrical properties of hydrogenated nanocrystalline cubic silicon carbide can be influenced by its crystallinity. In this study, we propose the use of conductive atomic force microscopy (Conductive-AFM) to evaluate the crystalline volume fraction (fc) of p-nc-3C-SiC:H thin films (20∼30 nm) as a new method instead of Raman scattering spectroscopy, X-ray diffraction, and spectroscopic ellipsometry.

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