Mobility improvement in nanowire junctionless transistors by uniaxial strain

2010 IEEE International SOI Conference (SOI) ◽

10.1109/soi.2010.5641390 ◽

2010 ◽

Author(s):

J.-P. Raskin ◽

J.-P. Colinge ◽

I. Ferain ◽

A. Kranti ◽

C.-W. Lee ◽

...

Keyword(s):

Uniaxial Strain ◽

Junctionless Transistors

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Mobility improvement in nanowire junctionless transistors by uniaxial strain

Applied Physics Letters ◽

10.1063/1.3474608 ◽

2010 ◽

Vol 97 (4) ◽

pp. 042114 ◽

Author(s):

Jean-Pierre Raskin ◽

Jean-Pierre Colinge ◽

Isabelle Ferain ◽

Abhinav Kranti ◽

Chi-Woo Lee ◽

...

Keyword(s):

Uniaxial Strain ◽

Junctionless Transistors

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Characterizing the Relaxation Modulus Properties of HMA Mixes Based on the Uniaxial Strain-Controlled Testing

Road Materials and Pavement Design ◽

10.3166/rmpd.11.529-557 ◽

2010 ◽

Vol 11 (3) ◽

pp. 529-557

Author(s):

Lubinda F Walubita ◽

Amy Epps Martin

Keyword(s):

Relaxation Modulus ◽

Uniaxial Strain

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Biaxial versus uniaxial strain tuning of single-layer MoS2

Nano Materials Science ◽

10.1016/j.nanoms.2021.03.001 ◽

2021 ◽

Author(s):

Felix Carrascoso ◽

Riccardo Frisenda ◽

Andres Castellanos-Gomez

Keyword(s):

Single Layer ◽

Uniaxial Strain

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Measurement of Unloading Pore Volume Compressibility of Frio Sand Under Uniaxial Strain Stress Path and Implications on Reservoir Pressure Management

Rock Mechanics and Rock Engineering ◽

10.1007/s00603-021-02571-3 ◽

2021 ◽

Author(s):

Xiaojin Zheng ◽

D. Nicolas Espinoza

Keyword(s):

Pore Volume ◽

Stress Path ◽

Uniaxial Strain ◽

Reservoir Pressure ◽

Pressure Management ◽

Volume Compressibility ◽

Pore Volume Compressibility ◽

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Theoretical study on stabilization and destabilization of magnetic skyrmions by uniaxial-strain-induced anisotropic Dzyaloshinskii-Moriya interactions

Physical Review Materials ◽

10.1103/physrevmaterials.4.034404 ◽

2020 ◽

Vol 4 (3) ◽

Author(s):

Kohei Tanaka ◽

Ryosuke Sugawara ◽

Masahito Mochizuki

Keyword(s):

Theoretical Study ◽

Uniaxial Strain ◽

Magnetic Skyrmions

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High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409638 ◽

2015 ◽

Author(s):

Yao-Jen Lee ◽

Ta-Chun Cho ◽

Po-Jung Sung ◽

Kuo-Hsing Kao ◽

Fu-Kuo Hsueh ◽

...

Keyword(s):

Co2 Laser ◽

High Performance ◽

Laser Annealing ◽

Junctionless Transistors

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Persistent and non-persistent uniaxial strain events observed in small rafts of xenon physisorbed on Pt(111): A molecular dynamics study

Surface Science ◽

10.1016/0039-6028(89)90544-x ◽

1989 ◽

Vol 217 (1-2) ◽

pp. 199-232 ◽

Author(s):

J.E. Black ◽

A. Janzen

Keyword(s):

Molecular Dynamics ◽

Uniaxial Strain

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Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760706 ◽

2008 ◽

Author(s):

Md. Itrat Bin Shams ◽

Md. Kawsar Alam ◽

Quazi D. M. Khosru

Keyword(s):

Uniaxial Strain ◽

Double Gate ◽

Gate Capacitance

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Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.01.002 ◽

2013 ◽

Vol 81 ◽

pp. 58-62 ◽

Author(s):

Dae-Young Jeon ◽

So Jeong Park ◽

Mireille Mouis ◽

Sylvain Barraud ◽

Gyu-Tae Kim ◽

...

Keyword(s):

Channel Width ◽

Electrical Characteristics ◽

Junctionless Transistors ◽

Channel Width Variation

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Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Physical Review Materials ◽

10.1103/physrevmaterials.3.115001 ◽

2019 ◽

Vol 3 (11) ◽

Author(s):

Changan Wang ◽

Hongbin Zhang ◽

Kumar Deepak ◽

Chao Chen ◽

Arnaud Fouchet ◽

...

Keyword(s):

Uniaxial Strain ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator

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